Carpenter, T orcid.org/0000-0001-5676-1739, Cowell, D, Clegg, H et al. (2 more authors) (2021) High-Power Gallium Nitride HIFU Transmitter with Integrated Real-Time Current and Voltage Measurement. IEEE Transactions on Biomedical Circuits and Systems. ISSN 1932-4545
Abstract
High-Intensity Focused Ultrasound (HIFU) therapy provides a non-invasive technique with which to destroy cancerous tissue without using ionizing radiation. To drive large single-element HIFU transducers, ultrasound transmitters capable of delivering high powers at relevant frequencies are required. The acoustic power delivered to a transducers focal region will determine the treated area, and due to safety concerns and intervening layers of attenuation, control of this output power is critical. A typical setup involves large inefficient linear power amplifiers to drive the transducer. Switched mode transmitters allow for a more compact drive system with higher efficiencies, with multi-level transmitters allowing control over the output power. Real-time monitoring of power delivered can avoid damage to the transducer and injury to patients due to over treatment, and allow for precise control over the output power. This study demonstrates a transformer-less, high power switched mode transmit transmitter based on Gallium-Nitride (GaN) transistors that is capable of delivering peak powers up to 1.8 kW at up to 600 Vpp, while operating at frequencies from DC to 5 MHz. The design includes a 12 bit 16 MHz floating Current/Voltage (I-V) measurement circuit to allow real-time high-side monitoring of the power delivered to the transducer allowing use with multi-element transducers.
Metadata
Item Type: | Article |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | © 2021 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. Uploaded in accordance with the publisher's self-archiving policy. |
Keywords: | HIFU , Power Amplifiers , Gallium Nitride Transistors |
Dates: |
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Institution: | The University of Leeds |
Academic Units: | The University of Leeds > Faculty of Engineering & Physical Sciences (Leeds) > School of Electronic & Electrical Engineering (Leeds) > Robotics, Autonomous Systems & Sensing (Leeds) |
Depositing User: | Symplectic Publications |
Date Deposited: | 25 Mar 2021 15:59 |
Last Modified: | 30 Mar 2021 13:51 |
Status: | Published online |
Publisher: | Institute of Electrical and Electronics Engineers (IEEE) |
Identification Number: | 10.1109/tbcas.2021.3067842 |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:172490 |