Li, Z., Allford, C.P., Shutts, S. et al. (5 more authors) (2020) Monolithic InP quantum dot mode-locked lasers emitting at 730 nm. IEEE Photonics Technology Letters, 32 (17). pp. 1073-1076. ISSN 1041-1135
Abstract
This letter reports on InP/GaInP quantum dot mode-locked lasers emitting in the 730 nm wavelength region, extending the spectral range of previously reported monolithic mode-locked edge-emitting lasers. Modal gain and absorption measurements were used to identify a relatively broad spectrum which is utilised to support passive mode-locking in a monolithically integrated two-section ridge laser. The conditions for mode-locking were explored by varying the current to the gain section and reverse bias to the absorber section. For a total cavity length of 3 mm, the shortest pulse train observed was 6 ps in duration with a repetition rate of 12.55 GHz.
Metadata
Item Type: | Article |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | © 2020 IEEE. |
Keywords: | mode-locked laser diode; monolithic integration; InP quantum dots |
Dates: |
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Institution: | The University of Sheffield |
Academic Units: | The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield) |
Funding Information: | Funder Grant number Engineering and Physical Science Research Council EP/P006973/1 |
Depositing User: | Symplectic Sheffield |
Date Deposited: | 21 Oct 2020 07:46 |
Last Modified: | 21 Oct 2020 07:46 |
Status: | Published |
Publisher: | Institute of Electrical and Electronics Engineers (IEEE) |
Refereed: | Yes |
Identification Number: | 10.1109/lpt.2020.3012568 |
Related URLs: | |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:166996 |