Sala, E.M. orcid.org/0000-0001-8116-8830, Stracke, G., Selve, S. et al. (7 more authors) (2016) Growth and structure of In0.5Ga0.5Sb quantum dots on GaP(001). Applied Physics Letters, 109 (10). 102102. ISSN 0003-6951
Abstract
Stranski-Krastanov (SK) growth of In0.5Ga0.5Sb quantum dots (QDs) on GaP(001) by metalorganic vapor phase epitaxy is demonstrated. A thin GaAs interlayer prior to QD deposition enables QD nucleation. The impact of a short Sb-flush before supplying InGaSb is investigated. QD growth gets partially suppressed for GaAs interlayer thicknesses below 6 monolayers. QD densities vary from 5 × 109 to 2 × 1011 cm−2 depending on material deposition and Sb-flush time. When In0.5Ga0.5Sb growth is carried out without Sb-flush, the QD density is generally decreased, and up to 60% larger QDs are obtained.
Metadata
Item Type: | Article |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | © 2016 The Author(s). Reproduced in accordance with the publisher's self-archiving policy. |
Dates: |
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Institution: | The University of Sheffield |
Academic Units: | The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield) |
Depositing User: | Symplectic Sheffield |
Date Deposited: | 28 Nov 2019 12:15 |
Last Modified: | 28 Nov 2019 12:18 |
Status: | Published |
Publisher: | AIP Publishing |
Refereed: | Yes |
Identification Number: | 10.1063/1.4962273 |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:154003 |