Growth and structure of In0.5Ga0.5Sb quantum dots on GaP(001)

Abstract

Stranski-Krastanov (SK) growth of In0.5Ga0.5Sb quantum dots (QDs) on GaP(001) by metalorganic vapor phase epitaxy is demonstrated. A thin GaAs interlayer prior to QD deposition enables QD nucleation. The impact of a short Sb-flush before supplying InGaSb is investigated. QD growth gets partially suppressed for GaAs interlayer thicknesses below 6 monolayers. QD densities vary from 5 × 109 to 2 × 1011 cm−2 depending on material deposition and Sb-flush time. When In0.5Ga0.5Sb growth is carried out without Sb-flush, the QD density is generally decreased, and up to 60% larger QDs are obtained.

Metadata

Item Type:	Article
Authors/Creators:	Sala, E.M. https://orcid.org/0000-0001-8116-8830 Stracke, G. Selve, S. Niermann, T. Lehmann, M. Schlichting, S. Nippert, F. Callsen, G. Strittmatter, A. Bimberg, D.
Copyright, Publisher and Additional Information:	© 2016 The Author(s). Reproduced in accordance with the publisher's self-archiving policy.
Dates:	Accepted: 19 August 2016 Published (online): 6 September 2016 Published: 5 September 2016
Institution:	The University of Sheffield
Academic Units:	The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Depositing User:	Symplectic Sheffield
Date Deposited:	28 Nov 2019 12:15
Last Modified:	28 Nov 2019 12:18
Status:	Published
Publisher:	AIP Publishing
Refereed:	Yes
Identification Number:	10.1063/1.4962273
Open Archives Initiative ID (OAI ID):	oai:eprints.whiterose.ac.uk:154003

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Growth and structure of In0.5Ga0.5Sb quantum dots on GaP(001)

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