Jackson, Edward Alan, Wu, Yifan, Frost, William James orcid.org/0000-0001-5249-1006 et al. (9 more authors) (2019) Non-destructive imaging for quality assurance of magnetoresistive random-access memory junctions. Journal of Physics D: Applied Physics. 014004. ISSN 1361-6463
Abstract
We have developed a new non-destructive sub-surface interfacial imaging technique. By controlling the penetration depth of the incident electrons, through control of the electron beam acceleration voltage in a scanning electron microscope, we can observe sub-surface interfaces. The voltages for imaging are selected based on Monte Carlo electron flight simulations, where the two voltages have >5% difference between the number of backscattered electrons generated in the layers above and below the buried interface under investigation. Due to the non-destructive nature, this imaging method can be used alongside an applied electrical current and voltage, allowing concurrent observations of the interfacial structures and transport properties, e.g., effective and active junction area, to occur. Magnetic tunnel junctions used in magnetic random access memory have been imaged and the data has been fed back to improve their fabrication processes. Our imaging method is therefore highly useful as both a quality assurance and development tool for magnetic memory and nanoelectronic devices.
Metadata
Item Type: | Article |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | © 2019 IOP Publishing Ltd |
Dates: |
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Institution: | The University of York |
Academic Units: | The University of York > Faculty of Sciences (York) > Electronic Engineering (York) The University of York > Faculty of Sciences (York) > Physics (York) |
Funding Information: | Funder Grant number EPSRC EP/M02458X/1 |
Depositing User: | Pure (York) |
Date Deposited: | 27 Sep 2019 08:20 |
Last Modified: | 16 Oct 2024 16:04 |
Published Version: | https://doi.org/10.1088/1361-6463/ab47b6 |
Status: | Published |
Refereed: | Yes |
Identification Number: | 10.1088/1361-6463/ab47b6 |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:151424 |
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Filename: Jackson_2020_J._Phys._D_Appl._Phys._53_014004.pdf
Description: Non-destructive imaging for quality assurance of magnetoresistive random-access memory junctions
Licence: CC-BY 2.5