Avrutin, Eugene orcid.org/0000-0001-5488-3222 and Ryvkin, Boris (2019) Effect of spatial hole burning on output characteristics of high power edge emitting semiconductor lasers:a universal analytical estimate and numerical analysis. Journal of Applied Physics. 023108. ISSN 1089-7550
Abstract
The effect of longitudinal spatial hole burning on the performance of a semiconductor laser with a strongly asymmetric resonator is investigated numerically. The effects of spatial hole burning on, firstly, the non-stimulated recombination in the laser (quantified as an increased effective threshold current) and, secondly, the output efficiency are calculated and compared, and the latter is shown to dominate at high currents. It is shown that the output efficiency at high pumping levels in the presence of the spatial hole burning effect can be estimated using the standard expression as the ratio of output loss to total loss, but with the internal loss enhanced by a factor greater than one and independent on the injection level. A simple universal expression for this factor for a highly asymmetric cavity, as a function of the output mirror reflectance, is obtained and compared to numerical results, with good agreement.
Metadata
Item Type: | Article |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | © 2018 Author(s). This is an author-produced version of the published paper. Uploaded in accordance with the publisher’s self-archiving policy. Further copying may not be permitted; contact the publisher for details. |
Dates: |
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Institution: | The University of York |
Academic Units: | The University of York > Faculty of Sciences (York) > Electronic Engineering (York) |
Depositing User: | Pure (York) |
Date Deposited: | 20 Dec 2018 14:10 |
Last Modified: | 21 Nov 2024 00:38 |
Published Version: | https://doi.org/10.1063/1.5055021 |
Status: | Published |
Refereed: | Yes |
Identification Number: | 10.1063/1.5055021 |
Related URLs: | |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:140200 |
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Description: Analytical model of SHB absorption enhancement final