Avrutin, Eugene orcid.org/0000-0001-5488-3222, Ryvkin, Boris and Kostamovaara, Juha Tapio (2018) Optical loss suppression in long-wavelength semiconductor lasers at elevated temperatures by strong doping of n-waveguides. Semiconductor science and technology. 105010. ISSN 0268-1242
Abstract
We show that strong n-doping of the n-waveguide layer substantially decreases the thermal carrier leakage from the active layer and the associated optical losses in III-V semiconductor lasers. The effect is particularly pronounced in devices operating at the wavelength region where the free hole absorption cross-section is much greater than that of free electrons. This is predicted to decrease the threshold current and improve the output efficiency of the lasers. An example of a bulk InGaAsP/InP pulsed lasers is used to demonstrate that lasers with highly doped n-InGaAsP side of the waveguide can retain high output powers at ambient temperatures substantially above room temperature.
Metadata
Item Type: | Article |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | © 2018 IOP Publishing Ltd. This is an author-produced version of the published paper. Uploaded in accordance with the publisher’s self-archiving policy. |
Keywords: | High power lasers,semiconductor lasers |
Dates: |
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Institution: | The University of York |
Academic Units: | The University of York > Faculty of Sciences (York) > Electronic Engineering (York) |
Depositing User: | Pure (York) |
Date Deposited: | 19 Dec 2018 17:00 |
Last Modified: | 16 Oct 2024 15:20 |
Published Version: | https://doi.org/10.1088/1361-6641/aadfb8 |
Status: | Published |
Refereed: | Yes |
Identification Number: | 10.1088/1361-6641/aadfb8 |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:140199 |
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Description: Paper SST-104807 revised after acceptance