Fang, Hanlin, Liu, Jin, Li, Hongji et al. (6 more authors) (2018) 1305 nm Few-Layer MoTe2-on-Silicon Laser-Like Emission. Laser and Photonics Reviews. 1800015. ISSN 1863-8899
Abstract
The missing piece in the jigsaw of silicon photonics is a light source that can be easily incorporated into the standard silicon fabrication process. Here, silicon laser-like emission is reported that employs few-layer semiconducting transition metal dichalogenides of molybdenum ditelluride (MoTe2) as a gain material in a silicon photonic crystal L3 nanocavity. An optically pumped MoTe2-on-silicon laser-like emission at 1305 nm, i.e. in the center of the “O-band” of optical communications, is demonstrated at room temperature and with a threshold power density of 1.5 kW/cm2. The surprising insight is that, contrary to common understanding, a monolayer MoTe2 is not required to achieve higher efficiency laser-like operation. Instead, few-layer MoTe2 offers a higher overlap between the two dimensional (2D) gain material and the optical mode for sufficient gain. The ability to use few-layer material opens new opportunities for deploying manufacturing methods such as chemical vapor deposition and thereby brings 2D-on-silicon devices a step closer to becoming a scalable technology.
Metadata
Item Type: | Article |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | ©2018 WILEY-VCH Verlag GmbH & Co. This is an author-produced version of the published paper. Uploaded in accordance with the publisher’s self-archiving policy. Further copying may not be permitted; contact the publisher for details |
Keywords: | few-layer,molybdenum ditelluride,O-band,photonic crystal cavity,silicon lasers |
Dates: |
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Institution: | The University of York |
Academic Units: | The University of York > Faculty of Social Sciences (York) > Education (York) The University of York > Faculty of Sciences (York) > Physics (York) |
Depositing User: | Pure (York) |
Date Deposited: | 02 Aug 2018 14:30 |
Last Modified: | 08 Feb 2025 00:30 |
Published Version: | https://doi.org/10.1002/lpor.201800015 |
Status: | Published |
Refereed: | Yes |
Identification Number: | 10.1002/lpor.201800015 |
Related URLs: | |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:134120 |
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Description: 1305 nm Few-Layer MoTe2-on-Silicon Laser-Like Emission