Zaidi, Z.H., Lee, K.B. orcid.org/0000-0002-5374-2767, Roberts, J.W. et al. (9 more authors) (2018) Effects of surface plasma treatment on threshold voltage hysteresis and instability in metal-insulator-semiconductor (MIS) AlGaN/GaN heterostructure HEMTs. Journal of Applied Physics , 123 (18). 184503. ISSN 0021-8979
Abstract
In a bid to understand the commonly observed hysteresis in the threshold voltage (VTH) in AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors during forward gate bias stress, we have analyzed a series of measurements on devices with no surface treatment and with two different plasma treatments before the in-situ Al2O3 deposition. The observed changes between samples were quasi-equilibrium VTH, forward bias related VTH hysteresis, and electrical response to reverse bias stress. To explain these effects, a disorder induced gap state model, combined with a discrete level donor, at the dielectric/semiconductor interface was employed. Technology Computer-Aided Design modeling demonstrated the possible differences in the interface state distributions that could give a consistent explanation for the observations.
Metadata
Item Type: | Article |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Zaidi, Z.H., Lee, K.B. , Roberts, J.W. et al. (9 more authors) (2018) Effects of surface plasma treatment on threshold voltage hysteresis and instability in metal-insulator-semiconductor (MIS) AlGaN/GaN heterostructure HEMTs. Journal of Applied Physics , 123 (18). 184503. ISSN 0021-8979 and may be found at https://doi.org/10.1063/1.5027822. |
Dates: |
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Institution: | The University of Sheffield |
Academic Units: | The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield) |
Funding Information: | Funder Grant number ENGINEERING AND PHYSICAL SCIENCE RESEARCH COUNCIL (EPSRC) EP/N015878/1 |
Depositing User: | Symplectic Sheffield |
Date Deposited: | 31 May 2018 09:27 |
Last Modified: | 31 May 2018 09:36 |
Published Version: | https://doi.org/10.1063/1.5027822 |
Status: | Published |
Publisher: | AIP Publishing |
Refereed: | Yes |
Identification Number: | 10.1063/1.5027822 |
Related URLs: | |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:131498 |