On the Dynamic characteristics of Ferroelectric and Paraelectric FETs

Kumar, A. orcid.org/0000-0002-8288-6401 and De Souza, M.M. (2018) On the Dynamic characteristics of Ferroelectric and Paraelectric FETs. In: 2018 IEEE Electron Devices Technology and Manufacturing Conference Proceedings of Technical Papers. 2018 IEEE Electron Devices Technology and Manufacturing Conference (EDTM), 13-16 Mar 2018, Kobe, Japan. IEEE Electron Devices Society , pp. 184-185. ISBN 978-1-5386-3711-1

Abstract

Metadata

Item Type: Proceedings Paper
Authors/Creators:
Copyright, Publisher and Additional Information:

© 2018 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works. Reproduced in accordance with the publisher's self-archiving policy.
Keywords: Paraelectric FET; gate scan frequency; steep subthreshold switching; ferroelectric FET; series R-C circuit
Dates:
  • Published: 31 July 2018
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Funding Information:
Funder
Grant number
ENIAC
296131-1
Depositing User: Symplectic Sheffield
Date Deposited: 19 Apr 2018 08:53
Last Modified: 04 Sep 2018 14:16
Published Version: https://doi.org/10.1109/EDTM.2018.8421493
Status: Published
Publisher: IEEE Electron Devices Society
Refereed: Yes
Identification Number: 10.1109/EDTM.2018.8421493
Open Archives Initiative ID (OAI ID):

Export

Statistics


CORE (COnnecting REpositories)