Keen, J.A., Lane, D., Kesaria, M. orcid.org/0000-0003-1664-0806 et al. (2 more authors) (2018) InAs/InAsSb type-II strained-layer superlattices for mid-infrared LEDs. Journal of Physics D: Applied Physics, 51 (7). 075103. ISSN 0022-3727
Abstract
InAs/InAsSb type-II strained-layer superlattice (SLS) and multiple quantum well (MQW) structures have been studied for their suitability in the active region of mid-infrared LEDs operating at room temperature. A series of InAs/InAs1−xSbx superlattices with low antimony content (x = 3.8–13.5%) were grown by MBE on InAs substrates and characterised using x-ray diffraction and photoluminescence (PL). The 4K PL spectra of these samples exhibit the expected peak shift to longer wavelength and a reduction in intensity as the Sb content is increased. Band structure simulations highlight the effects of changing the antimony content and the layer thicknesses, to tailor the overlap of the electron and hole wavefunctions and maximise the radiative recombination rate. Analysis of the temperature dependence of the PL emission spectra enabled the extraction of quenching energies that demonstrate some suppression of Auger recombination in both the MQW and SLS structures. The MQW samples exhibit a changeover in the dominant radiative recombination process above ~100K associated with thermal emission of holes into the InAs barriers; this behaviour was not observed in the SLS samples. These SLS structures have the potential for use as the active region in room temperature mid-infrared LEDs.
Metadata
Item Type: | Article |
---|---|
Authors/Creators: |
|
Copyright, Publisher and Additional Information: | Original content from this work may be used under the terms of the Creative Commons Attribution 3.0 licence. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI. |
Keywords: | InAs/ InAsSb; superlattice; type-II; mid-infrared; LED |
Dates: |
|
Institution: | The University of Sheffield |
Academic Units: | The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield) |
Depositing User: | Symplectic Sheffield |
Date Deposited: | 23 Feb 2018 16:38 |
Last Modified: | 26 Mar 2018 17:17 |
Published Version: | https://doi.org/10.1088/1361-6463/aaa60e |
Status: | Published |
Publisher: | IOP Publishing |
Refereed: | Yes |
Identification Number: | 10.1088/1361-6463/aaa60e |
Related URLs: | |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:127690 |