Richards, R.D. orcid.org/0000-0001-7043-8372, Mellor, A., Harun, F. et al. (7 more authors) (2017) Photovoltaic characterisation of GaAsBi/GaAs multiple quantum well devices. Solar Energy Materials and Solar Cells, 172. pp. 238-243. ISSN 0927-0248
Abstract
A series of strained GaAsBi/GaAs multiple quantum well diodes are characterised to assess the potential of GaAsBi for photovoltaic applications. The devices are compared with strained and strain-balanced InGaAs based devices.
The dark currents of the GaAsBi based devices are around 20 times higher than those of the InGaAs based devices. The GaAsBi devices that have undergone significant strain relaxation have dark currents that are a further 10–20 times higher.
Quantum efficiency measurements show the GaAsBi devices have a lower energy absorption edge and stronger absorption than the strained InGaAs devices. These measurements also indicate incomplete carrier extraction from the GaAsBi based devices at short circuit, despite the devices having a relatively low background doping. This is attributed to hole trapping within the quantum wells, due to the large valence band offset of GaAsBi.
Metadata
Item Type: | Article |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | © 2017 The Authors. Published by Elsevier B.V. This is an open access article under the CC BY-NC-ND license (http://creativecommons.org/licenses/BY-NC-ND/4.0/). |
Keywords: | GaAsBi; MQWs; Multijunction; IQE; InGaAs |
Dates: |
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Institution: | The University of Sheffield |
Academic Units: | The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield) |
Funding Information: | Funder Grant number Engineering and Physical Sciences Research Council EP/M506618/1 |
Depositing User: | Symplectic Sheffield |
Date Deposited: | 25 Aug 2017 12:56 |
Last Modified: | 01 Nov 2018 12:17 |
Published Version: | https://doi.org/10.1016/j.solmat.2017.07.029 |
Status: | Published |
Publisher: | Elsevier |
Refereed: | Yes |
Identification Number: | 10.1016/j.solmat.2017.07.029 |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:120567 |