Van der Waals epitaxy between the highly lattice mismatched Cu-doped FeSe and Bi2Te3

Abstract

We present a structural and density functional theory study of FexCu1-xSe within the three-dimensional topological insulator Bi2Te3. The FexCu1-xSe inclusions are single-crystalline and epitaxially oriented with respect to the Bi2Te3 thin film. Aberration-corrected scanning transmission electron microscopy and electron energy loss spectroscopy show an atomically sharp FeICu1-xSe/Bi2Te3 interface. The FexCu1-xSe/Bi2Te3 interface is determined by Se-Te bonds and no misfit dislocations are observed, despite the different lattice symmetries and large lattice mismatch of [sim]19%. First-principle calculations show that the large strain at the FexCu1-xSe/Bi2Te3 interface can be accommodated by van der Waals-like bonding between Se and Te atoms.

Metadata

Item Type:	Article
Authors/Creators:	Ghasemi, Arsham Kepaptsoglou, Demie https://orcid.org/0000-0003-0499-0470 Galindo, Pedro L. Ramasse, Quentin Hesjedal, T Lazarov, Vlado https://orcid.org/0000-0002-4314-6865
Copyright, Publisher and Additional Information:	© The Author(s), 2017.
Dates:	Accepted: 8 May 2017 Published (online): 1 July 2017 Published: 7 July 2017
Institution:	The University of York
Academic Units:	The University of York > Faculty of Sciences (York) > Physics (York)
Depositing User:	Pure (York)
Date Deposited:	12 Jul 2017 09:30
Last Modified:	02 Apr 2025 23:10
Published Version:	https://doi.org/10.1038/am.2017.111
Status:	Published
Refereed:	Yes
Identification Number:	10.1038/am.2017.111
Related URLs:	https://www.nature.com/am/journal/v9/n7/... http://www.nature.com/doifinder/10.1038/...
Open Archives Initiative ID (OAI ID):	oai:eprints.whiterose.ac.uk:118827