Gorodetsky, Andrei, Yadav, Amit, Avrutin, Eugene orcid.org/0000-0001-5488-3222 et al. (2 more authors) (2017) Photoelectric Properties of InAs/GaAs Quantum Dot Photoconductive Antenna Wafers. IEEE Journal of Selected Topics in Quantum Electronics. pp. 1-5. ISSN 1077-260X
Abstract
In this paper, the study of the photoconductivity in self-assembled InAs/GaAs quantum dot photoconductive antenna in the wavelength region between 1140 nm and 1250 nm at temperatures ranging from 13 K to 400 K is reported. These antennas are aimed to work in conjunction with quantum dot semiconductor lasers to effectively generate pulsed and CW terahertz radiation. For the efficient operation, laser wavelengths providing the highest photocurrent should be determined. To study the interband photoconductivity of quantum dot photoconductive antennas, at room and cryogenic temperatures, we employed a broadly-tunable InAs/GaAs quantum dot based laser providing a coherent pump with power exceeding 20 mW over a 100 nm tunability range. The quantum dot antenna structure revealed sharp temperature-dependent photoconductivity peaks in the vicinity of wavelengths, corresponding to the ground and excited states of InAs/GaAs quantum dots. The ground state photoconductivity peak vanishes with a temperature drop, whereas the excited state peak persists. We associate this effect with different mechanisms of photoexcited carriers extraction from quantum dots.
Metadata
Item Type: | Article |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | © 2017 IEEE. Personal use is permitted, but republication/redistribution requires IEEE permission. See http://www.ieee.org/publications standards/publications/rights/index.html for more information. This is an author-produced version of the published paper. Uploaded in accordance with the publisher’s self-archiving policy. Further copying may not be permitted; contact the publisher for details. |
Dates: |
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Institution: | The University of York |
Academic Units: | The University of York > Faculty of Sciences (York) > Electronic Engineering (York) |
Depositing User: | Pure (York) |
Date Deposited: | 05 Apr 2017 14:20 |
Last Modified: | 20 Dec 2024 00:13 |
Published Version: | https://doi.org/10.1109/JSTQE.2017.2690831 |
Status: | Published online |
Refereed: | Yes |
Identification Number: | 10.1109/JSTQE.2017.2690831 |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:114576 |