Alvarez, B., Francis, D., Faili, F. et al. (4 more authors) (2016) Elimination of leakage in GaN-on-diamond. In: Compound Semiconductor Integrated Circuit Symposium (CSICS), 2016 IEEE. 2016 IEEE CSIC Symposium, 23–26 October 2016, Austin, TX, USA. IEEE , pp. 114-117.
Abstract
The use of chemical vapor deposition diamond as a substrate for gallium nitride (GaN) to form GaN- on-diamond has the potential to allow for higher linear power densities in GaN high electron mobility transistors (HEMTs). The increase in GaN HEMT power density on diamond has been limited to date by the electrical leakage in GaN-on-diamond substrates. In this paper we show that to eliminate buffer leakage in silicon based GaN-on- diamond, you have to completely remove the transition layers used to grow high quality GaN on the original host silicon. By completely removing the transition layers in GaN-on-diamond, we demonstrated buffer leakage comparable to the leakage in GaN on silicon carbide.
Metadata
Item Type: | Proceedings Paper |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | © 2016 IEEE. This is an author produced version of a paper subsequently published in Compound Semiconductor Integrated Circuit Symposium (CSICS), 2016 IEEE. Uploaded in accordance with the publisher's self-archiving policy. |
Keywords: | GaN-on-Diamond; HEMT; GaN |
Dates: |
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Institution: | The University of Sheffield |
Academic Units: | The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield) |
Funding Information: | Funder Grant number Element Six Ltd UNSPECIFIED |
Depositing User: | Symplectic Sheffield |
Date Deposited: | 20 Feb 2017 14:39 |
Last Modified: | 21 Mar 2018 08:58 |
Published Version: | https://doi.org/10.1109/CSICS.2016.7751039 |
Status: | Published |
Publisher: | IEEE |
Refereed: | Yes |
Identification Number: | 10.1109/CSICS.2016.7751039 |
Related URLs: | |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:112526 |