Tensely strained GeSn alloys as optical gain media

Wirths, S, Ikonic, Z, Tiedemann, AT et al. (10 more authors) (2013) Tensely strained GeSn alloys as optical gain media. Applied Physics Letters, 103 (19). 192110. ISSN 0003-6951

Abstract

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Authors/Creators:
  • Wirths, S
  • Ikonic, Z
  • Tiedemann, AT
  • Holländer, B
  • Stoica, T
  • Mussler, G
  • Breuer, U
  • Hartmann, JM
  • Benedetti, A
  • Chiussi, S
  • Grützmacher, D
  • Mantl, S
  • Buca, D
Copyright, Publisher and Additional Information: (c) 2013, American Institute of Physics. This is an author produced version of a paper published in Applied Physics Letters. Uploaded in accordance with the publisher's self-archiving policy.
Keywords: Germanium; Elemental semiconductors; Semiconductor growth; Doping; Epitaxy; Active layer; Lattice constants; Cladding; Heterojunctions; Semiconductors
Dates:
  • Published: 4 November 2013
Institution: The University of Leeds
Academic Units: The University of Leeds > Faculty of Engineering & Physical Sciences (Leeds) > School of Electronic & Electrical Engineering (Leeds) > Pollard Institute (Leeds)
Depositing User: Symplectic Publications
Date Deposited: 19 Mar 2014 11:10
Last Modified: 29 Mar 2018 12:47
Published Version: http://dx.doi.org/10.1063/1.4829360
Status: Published
Publisher: American Institute of Physics
Identification Number: https://doi.org/10.1063/1.4829360
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