Tensely strained GeSn alloys as optical gain media
Wirths, S, Ikonic, Z, Tiedemann, AT et al. (10 more authors)
(2013)
Tensely strained GeSn alloys as optical gain media.
Applied Physics Letters, 103 (19).
192110.
ISSN 0003-6951
Abstract
This letter presents the epitaxial growth and characterization of a heterostructure for an electrically injected laser, based on a strained GeSn active well. The elastic strain within the GeSn well can be tuned from compressive to tensile by high quality large Sn content (Si)GeSn buffers. The optimum combination of tensile strain and Sn alloying softens the requirements upon indirect to direct bandgap transition. We theoretically discuss the strain-doping relation for maximum net gain in the GeSn active layer. Employing tensile strain of 0.5% enables reasonable high optical gain values for GeSn and even without any n-type doping for GeSn.
Metadata
Authors/Creators:
Wirths, S
Ikonic, Z
Tiedemann, AT
Holländer, B
Stoica, T
Mussler, G
Breuer, U
Hartmann, JM
Benedetti, A
Chiussi, S
Grützmacher, D
Mantl, S
Buca, D
Copyright, Publisher and Additional Information:
(c) 2013, American Institute of Physics. This is an author produced version of a paper published in Applied Physics Letters. Uploaded in accordance with the publisher's self-archiving policy.
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