Paradigm of Magnetic Domain Wall-Based In-Memory Computing

Zheng, X, Wang, J, Li, G et al. (7 more authors) (2020) Paradigm of Magnetic Domain Wall-Based In-Memory Computing. ACS Applied Electronic Materials, 2 (8). pp. 2375-2382. ISSN 2637-6113

Abstract

Metadata

Authors/Creators:
  • Zheng, X
  • Wang, J
  • Li, G
  • Lu, X
  • Li, W
  • Wang, Y
  • Chen, L
  • Yin, H
  • Wu, J
  • Xu, Y
Copyright, Publisher and Additional Information: © 2020 American Chemical Society. This is an author produced version of an article published in ACS Applied Electronic Materials. Uploaded in accordance with the publisher's self-archiving policy.
Keywords: in-memory computing, spin-based transistor, programmable nano-logic unit, domain-wall logic, permalloy
Dates:
  • Published: 25 August 2020
  • Accepted: 7 July 2020
  • Published (online): 7 July 2020
Institution: The University of Leeds
Academic Units: The University of Leeds > Faculty of Engineering & Physical Sciences (Leeds) > School of Electronic & Electrical Engineering (Leeds) > Pollard Institute (Leeds)
Depositing User: Symplectic Publications
Date Deposited: 26 Apr 2021 09:37
Last Modified: 07 Jul 2021 00:38
Status: Published
Publisher: American Chemical Society (ACS)
Identification Number: https://doi.org/10.1021/acsaelm.0c00318
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