Semi‐polar InGaN‐based green light‐emitting diodes grown on silicon

Shen, S., Zhao, X., Yu, X. et al. (3 more authors) (2020) Semi‐polar InGaN‐based green light‐emitting diodes grown on silicon. physica status solidi (a), 217 (7). 1900654. ISSN 1862-6300

Abstract

Metadata

Authors/Creators:
Copyright, Publisher and Additional Information: © 2019 WILEY‐VCH Verlag GmbH & Co.
Keywords: GaN; light-emitting diodes; semi-polar; silicon
Dates:
  • Published (online): 11 November 2019
  • Published: April 2020
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Funding Information:
FunderGrant number
Engineering and Physical Science Research CouncilEP/M003132/1; EP/M015181/1; EP/P006973/1
Depositing User: Symplectic Sheffield
Date Deposited: 06 Apr 2020 13:06
Last Modified: 26 Nov 2021 14:07
Status: Published
Publisher: Wiley
Refereed: Yes
Identification Number: https://doi.org/10.1002/pssa.201900654

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