Zaidi, Z.H., Lee, K.B. orcid.org/0000-0002-5374-2767, Roberts, J.W. et al. (9 more authors) (2018) Effects of surface plasma treatment on threshold voltage hysteresis and instability in metal-insulator-semiconductor (MIS) AlGaN/GaN heterostructure HEMTs. Journal of Applied Physics , 123 (18). 184503. ISSN 0021-8979
Abstract
In a bid to understand the commonly observed hysteresis in the threshold voltage (VTH) in AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors during forward gate bias stress, we have analyzed a series of measurements on devices with no surface treatment and with two different plasma treatments before the in-situ Al2O3 deposition. The observed changes between samples were quasi-equilibrium VTH, forward bias related VTH hysteresis, and electrical response to reverse bias stress. To explain these effects, a disorder induced gap state model, combined with a discrete level donor, at the dielectric/semiconductor interface was employed. Technology Computer-Aided Design modeling demonstrated the possible differences in the interface state distributions that could give a consistent explanation for the observations.
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Copyright, Publisher and Additional Information: | This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Zaidi, Z.H., Lee, K.B. , Roberts, J.W. et al. (9 more authors) (2018) Effects of surface plasma treatment on threshold voltage hysteresis and instability in metal-insulator-semiconductor (MIS) AlGaN/GaN heterostructure HEMTs. Journal of Applied Physics , 123 (18). 184503. ISSN 0021-8979 and may be found at https://doi.org/10.1063/1.5027822. | ||||
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Institution: | The University of Sheffield | ||||
Academic Units: | The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield) | ||||
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Depositing User: | Symplectic Sheffield | ||||
Date Deposited: | 31 May 2018 09:27 | ||||
Last Modified: | 31 May 2018 09:36 | ||||
Published Version: | https://doi.org/10.1063/1.5027822 | ||||
Status: | Published | ||||
Publisher: | AIP Publishing | ||||
Refereed: | Yes | ||||
Identification Number: | https://doi.org/10.1063/1.5027822 | ||||
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