Kumar, A. orcid.org/0000-0002-8288-6401 and De Souza, M.M. (2016) Extending the bounds of performance in E-mode p-channel GaN MOSHFETs. In: 2016 IEEE International Electron Devices Meeting (IEDM). 2016 IEEE International Electron Devices Meeting, 03-07 Dec 2016, San Francisco, CA, USA. IEEE . ISBN 978-1-5090-3901-2
Abstract
An investigation of the distribution of the electric field within a normally-off p-channel heterostructure field-effect transistor in GaN, explains why a high |Vth| requires a reduction of the thickness of oxide and the GaN channel layer. The trade-off between on-current |Ion| and |Vth|, responsible for the poor |ION| in E-mode devices is overcome with an additional cap AlGaN layer that modulates the electric field in itself and the oxide. A record |Ion| of 50-60 mA/mm is achieved with a |Vth| greater than |-2| V in the designed E-mode p-channel MOSHFET, which is more than double that in a conventional device.
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Copyright, Publisher and Additional Information: | © 2017, IEEE. This is an author produced version of a paper subsequently published in Electron Devices Meeting (IEDM), 2016 IEEE International. Uploaded in accordance with the publisher's self-archiving policy. | ||||
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Institution: | The University of Sheffield | ||||
Academic Units: | The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield) | ||||
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Depositing User: | Symplectic Sheffield | ||||
Date Deposited: | 31 Jul 2017 14:11 | ||||
Last Modified: | 19 Dec 2022 13:36 | ||||
Published Version: | https://doi.org/10.1109/IEDM.2016.7838368 | ||||
Status: | Published | ||||
Publisher: | IEEE | ||||
Refereed: | Yes | ||||
Identification Number: | https://doi.org/10.1109/IEDM.2016.7838368 | ||||
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