Elimination of leakage in GaN-on-diamond

Alvarez, B., Francis, D., Faili, F. et al. (4 more authors) (2016) Elimination of leakage in GaN-on-diamond. In: Compound Semiconductor Integrated Circuit Symposium (CSICS), 2016 IEEE. 2016 IEEE CSIC Symposium, 23–26 October 2016, Austin, TX, USA. IEEE , pp. 114-117.



  • Alvarez, B.
  • Francis, D.
  • Faili, F.
  • Lowe, F.
  • Twitchen, D.
  • Lee, K.B.
  • Houston, P.
Copyright, Publisher and Additional Information: © 2016 IEEE. This is an author produced version of a paper subsequently published in Compound Semiconductor Integrated Circuit Symposium (CSICS), 2016 IEEE. Uploaded in accordance with the publisher's self-archiving policy.
Keywords: GaN-on-Diamond; HEMT; GaN
  • Published: 24 November 2016
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Funding Information:
FunderGrant number
Depositing User: Symplectic Sheffield
Date Deposited: 20 Feb 2017 14:39
Last Modified: 21 Mar 2018 08:58
Published Version: https://doi.org/10.1109/CSICS.2016.7751039
Status: Published
Publisher: IEEE
Refereed: Yes
Identification Number: https://doi.org/10.1109/CSICS.2016.7751039
Related URLs:

Share / Export