Process Modules for GeSn Nanoelectronics with high Sn-contents

Schulte-Braucks, C, Glass, S, Hofmann, E et al. (7 more authors) (2017) Process Modules for GeSn Nanoelectronics with high Sn-contents. Solid-State Electronics, 128. pp. 54-59. ISSN 0038-1101

Abstract

Metadata

Authors/Creators:
  • Schulte-Braucks, C
  • Glass, S
  • Hofmann, E
  • Stange, D
  • Von den Driesch, N
  • Hartmann, JM
  • Ikonic, Z
  • Zhao, GT
  • Buca, D
  • Mantl, S
Copyright, Publisher and Additional Information: © 2016 Elsevier Ltd. This is an author produced version of a paper published in Solid-State Electronics. Uploaded in accordance with the publisher's self-archiving policy.
Keywords: GeSn; MOSFET; high-k/metal gate; NiGeSn
Dates:
  • Published: February 2017
  • Accepted: 18 October 2016
  • Published (online): 18 October 2016
Institution: The University of Leeds
Academic Units: The University of Leeds > Faculty of Engineering & Physical Sciences (Leeds) > School of Electronic & Electrical Engineering (Leeds) > Pollard Institute (Leeds)
Depositing User: Symplectic Publications
Date Deposited: 21 Oct 2016 08:39
Last Modified: 19 Oct 2017 09:52
Published Version: https://doi.org/10.1016/j.sse.2016.10.024
Status: Published
Publisher: Elsevier
Identification Number: https://doi.org/10.1016/j.sse.2016.10.024

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