Process modules for GeSn nanoelectronics with high Sn-contents

Schulte-Braucks, C, Glass, S, Hofmann, E et al. (7 more authors) (2016) Process modules for GeSn nanoelectronics with high Sn-contents. In: 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2016. EUROSOI-ULIS 2016, 25-27 Jan 2016, Vienna. IEEE , pp. 24-27. ISBN 9781467386098

Abstract

Metadata

Authors/Creators:
  • Schulte-Braucks, C
  • Glass, S
  • Hofmann, E
  • Stange, D
  • Von Den Driesch, N
  • Zhao, QT
  • Buca, D
  • Mantl, S
  • Hartmann, JM
  • Ikonic, Z
Copyright, Publisher and Additional Information: (c) 2016 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works.
Keywords: GeSn, MOSFET, high-k/metal gate, NiGeSn
Dates:
  • Published: 23 March 2016
Institution: The University of Leeds
Academic Units: The University of Leeds > Faculty of Engineering & Physical Sciences (Leeds) > School of Electronic & Electrical Engineering (Leeds) > Pollard Institute (Leeds)
Depositing User: Symplectic Publications
Date Deposited: 28 Jun 2016 13:13
Last Modified: 17 Jan 2018 02:44
Published Version: http://dx.doi.org/10.1109/ULIS.2016.7440043
Status: Published
Publisher: IEEE
Identification Number: https://doi.org/10.1109/ULIS.2016.7440043

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