Low Temperature Deposition of High-k/Metal Gate Stacks on High-Sn Content (Si)GeSn-Alloys

Schulte-Braucks, C, von den Driesch, N, Glass, S et al. (8 more authors) (2016) Low Temperature Deposition of High-k/Metal Gate Stacks on High-Sn Content (Si)GeSn-Alloys. ACS Applied Materials and Interfaces, 8 (20). pp. 13133-13139. ISSN 1944-8244



  • Schulte-Braucks, C
  • von den Driesch, N
  • Glass, S
  • Tiedemann, AT
  • Breuer, U
  • Besmehn, A
  • Hartmann, JM
  • Ikonic, Z
  • Zhao, QT
  • Mantl, S
  • Buca, D
Copyright, Publisher and Additional Information: © 2016 American Chemical Society.This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Applied Materials and Interfaces, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see http://dx.doi.org/10.1021/acsami.6b02425. Uploaded in accordance with the publisher's self-archiving policy.
Keywords: GeSn, high-k/metal gate, low energy direct band gap, high-mobility, atomic vapor deposition
  • Published: 25 May 2016
  • Accepted: 5 May 2016
  • Published (online): 5 May 2016
Institution: The University of Leeds
Academic Units: The University of Leeds > Faculty of Engineering & Physical Sciences (Leeds) > School of Electronic & Electrical Engineering (Leeds) > Pollard Institute (Leeds)
Depositing User: Symplectic Publications
Date Deposited: 17 Jun 2016 10:53
Last Modified: 18 Jul 2017 16:36
Published Version: http://dx.doi.org/10.1021/acsami.6b02425
Status: Published
Publisher: American Chemical Society
Identification Number: https://doi.org/10.1021/acsami.6b02425
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