Items where authors include "Jiu, L."

Article

Bruckbauer, J., Gong, Y., Jiu, L. et al. (9 more authors) (2021) Influence of micro-patterning of the growth template on defect reduction and optical properties of non-polar (11-20) GaN. Journal of Physics D: Applied Physics, 54 (2). 025107. ISSN 0022-3727

Trager-Cowan, C., Alasmari, A., Avis, W. et al. (34 more authors) (2020) Structural and luminescence imaging and characterisation of semiconductors in the scanning electron microscope. Semiconductor Science and Technology, 35 (5). 054001. ISSN 0268-1242

Zhang, Y., Smith, R.M. orcid.org/0000-0002-7718-7796, Jiu, L. et al. (2 more authors) (2019) Confocal photoluminescence investigation to identify basal stacking fault’s role in the optical properties of semi-polar InGaN/GaN lighting emitting diodes. Scientific Reports, 9 (1). 9735. ISSN 2045-2322

Bai, J., Jiu, L., Poyiatzis, N. et al. (3 more authors) (2019) Optical and polarization properties of nonpolar InGaN-based light-emitting diodes grown on micro-rod templates. Scientific Reports, 9 (1). 9770. ISSN 2045-2322

Trager-Cowan, C., Alasmari, A., Avis, W. et al. (33 more authors) (2019) Scanning electron microscope as a flexible tool for investigating the properties of UV-emitting nitride semiconductor thin films. Photonics Research, 7 (11). B73-B82.

Cai, Y. orcid.org/0000-0002-2004-0881, Yu, X., Shen, S. et al. (5 more authors) (2019) Overgrowth and characterization of (11-22) semi-polar GaN on (113) silicon with a two-step method. Semiconductor Science and Technology, 34 (4). 045012. ISSN 0268-1242

Gong, Y., Jiu, L., Bruckbauer, J. et al. (3 more authors) (2019) Monolithic multiple colour emission from InGaN grown on patterned non-polar GaN. Scientific Reports, 9. 986. ISSN 2045-2322

Bai, J., Jiu, L., Gong, Y. et al. (1 more author) (2018) Non-polar (11-20) GaN grown on sapphire with double overgrowth on micro-rod/stripe templates. Semiconductor Science and Technology, 33 (12). 125023. ISSN 0268-1242

Cai, Y. orcid.org/0000-0002-2004-0881, Zhu, C., Jiu, L. et al. (5 more authors) (2018) Strain Analysis of GaN HEMTs on (111) Silicon with Two Transitional AlxGa1-xN Layers. Materials, 11 (10). 1968. ISSN 1996-1944

Naresh-Kumar, G., Thomson, D., Zhang, Y. et al. (7 more authors) (2018) Imaging basal plane stacking faults and dislocations in (11-22) GaN using electron channelling contrast imaging. Journal of Applied Physics, 124 (6). 065301. ISSN 0021-8979

Jiu, L., Gong, Y. and Wang, T. orcid.org/0000-0001-5976-4994 (2018) Overgrowth and strain investigation of (11-20) non-polar GaN on patterned templates on sapphire. Scientific Reports, 8. 9898. ISSN 2045-2322

Brasser, C., Bruckbauer, J., Gong, Y. et al. (6 more authors) (2018) Cathodoluminescence studies of chevron features in semi-polar (1122) InGaN/GaN multiple quantum well structures. Journal of Applied Physics, 123 (17). 174502. ISSN 0021-8979

Hou, Y., Syed, Z.A., Jiu, L. et al. (2 more authors) (2017) Porosity-enhanced solar powered hydrogen generation in GaN photoelectrodes. Applied Physics Letters , 111 (20). 203901. ISSN 0003-6951

Bruckbauer, J., Li, Z., Naresh-Kumar, G. et al. (8 more authors) (2017) Spatially-resolved optical and structural properties of semi-polar [Formula: see text] Al x Ga1-x N with x up to 0.56. Scientific Reports, 7 (1). 10804. ISSN 2045-2322

Xu, B., Jiu, L., Gong, Y. et al. (4 more authors) (2017) Stimulated emission from semi-polar (11-22) GaN overgrown on sapphire. AIP ADVANCES, 7 (4). ARTN 045009.

Li, Z., Wang, L., Jiu, L. et al. (6 more authors) (2017) Optical investigation of semi-polar (11-22) Al<inf>x</inf>Ga<inf>1-x</inf>N with high Al composition. Applied Physics Letters, 110 (9). ISSN 0003-6951

Proceedings Paper

Trager-Cowan, C., Alasmari, A., Avis, W. et al. (34 more authors) (2020) Advances in electron channelling contrast imaging and electron backscatter diffraction for imaging and analysis of structural defects in the scanning electron microscope. In: IOP Conference Series: Materials Science and Engineering. 16th European Workshop on Modern Developments and Applications in Microbeam Analysis, 19-23 May 2019, Trondheim, Norway. IOP Publishing .