Bai, J., Jiu, L., Gong, Y. et al. (1 more author) (2018) Non-polar (11-20) GaN grown on sapphire with double overgrowth on micro-rod/stripe templates. Semiconductor Science and Technology, 33 (12). 125023. ISSN 0268-1242
Abstract
Non-polar (11-20) GaN with low defect density can be achieved on sapphire by means of an overgrowth on a micro-rod template recently developed, or on a conventional 〈1-100〉-oriented stripe template. The overgrowth on stripes block BSFs in the nonpolar GaN more effectively, but it is difficult to obtain a flat GaN surface due to its anisotropic pattern for overgrowth. The overgrowth on micro-rods can significantly reduce dislocations, simultaneously maintaining a smooth sample surface. Very recently, we develop a double overgrowth approach to grow (11-20) GaN on sapphire, i.e. first overgrowth on stripes and second overgrowth on micro-rods. The double overgrowth technique successfully utilizes the strengths of the two kinds of overgrowths, further improving crystal quality, which will be a very promising approach to achieve high quality (11-20) GaN for large-scale industrial production.
Metadata
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Copyright, Publisher and Additional Information: | © 2018 IOP Publishing Ltd. This is an author produced version of a paper subsequently published in Semiconductor Science and Technology. Uploaded in accordance with the publisher's self-archiving policy. | ||||||||
Keywords: | nonpolar GaN; overgrowth; patterning | ||||||||
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Institution: | The University of Sheffield | ||||||||
Academic Units: | The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield) | ||||||||
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Depositing User: | Symplectic Sheffield | ||||||||
Date Deposited: | 03 Dec 2018 11:54 | ||||||||
Last Modified: | 01 Nov 2019 01:39 | ||||||||
Published Version: | https://doi.org/10.1088/1361-6641/aaed93 | ||||||||
Status: | Published | ||||||||
Publisher: | IOP Publishing | ||||||||
Refereed: | Yes | ||||||||
Identification Number: | https://doi.org/10.1088/1361-6641/aaed93 | ||||||||
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