Imaging basal plane stacking faults and dislocations in (11-22) GaN using electron channelling contrast imaging

Naresh-Kumar, G., Thomson, D., Zhang, Y. et al. (7 more authors) (2018) Imaging basal plane stacking faults and dislocations in (11-22) GaN using electron channelling contrast imaging. Journal of Applied Physics, 124 (6). 065301. ISSN 0021-8979

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Authors/Creators:
Copyright, Publisher and Additional Information: © 2018 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
Dates:
  • Accepted: 21 July 2018
  • Published (online): 10 August 2018
  • Published: 14 August 2018
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Funding Information:
FunderGrant number
ENGINEERING AND PHYSICAL SCIENCE RESEARCH COUNCILEP/L017024/1
ENGINEERING AND PHYSICAL SCIENCE RESEARCH COUNCILEP/M015181/1
Depositing User: Symplectic Sheffield
Date Deposited: 22 Apr 2020 09:58
Last Modified: 22 Apr 2020 09:58
Status: Published
Publisher: AIP Publishing
Refereed: Yes
Identification Number: https://doi.org/10.1063/1.5042515
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