Overgrowth and characterization of (11-22) semi-polar GaN on (113) silicon with a two-step method

Cai, Y. orcid.org/0000-0002-2004-0881, Yu, X., Shen, S. et al. (5 more authors) (2019) Overgrowth and characterization of (11-22) semi-polar GaN on (113) silicon with a two-step method. Semiconductor Science and Technology, 34 (4). 045012. ISSN 0268-1242

Abstract

Metadata

Authors/Creators:
Copyright, Publisher and Additional Information: © 2019 IOP Publishing Ltd.
Keywords: semipolar; silicon substrate; GaN; MOVPE
Dates:
  • Accepted: 20 February 2019
  • Published (online): 20 February 2019
  • Published: 11 March 2019
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Funding Information:
FunderGrant number
Engineering and Physical Science Research CouncilEP/P006973/1
Depositing User: Symplectic Sheffield
Date Deposited: 06 Apr 2020 13:30
Last Modified: 06 Apr 2020 13:30
Status: Published
Publisher: IOP Publishing
Refereed: Yes
Identification Number: https://doi.org/10.1088/1361-6641/ab08bf
Related URLs:

Download not available

A full text copy of this item is not currently available from White Rose Research Online

Share / Export

Statistics