Items where authors include "Walther, T."

Article

Gong, T. orcid.org/0009-0005-0261-7172, Chen, L. orcid.org/0000-0003-2050-5383, Wang, X. et al. (4 more authors) (2025) Recent developments in transmission electron microscopy for crystallographic characterization of strained semiconductor heterostructures. Crystals, 15 (2). 192. ISSN 2073-4352

Dong, J. orcid.org/0000-0002-3853-1910, Bai, H., Deng, Y. et al. (5 more authors) (2025) Transmission electron microscopy of epitaxial semiconductor materials and devices. Journal of Physics D: Applied Physics, 58 (4). 043001. ISSN 0022-3727

Walther, T. orcid.org/0000-0003-3571-6263 (2024) Recent improvements in quantification of energy-dispersive X-ray spectra and maps in electron microscopy of semiconductors. Applied Research, 3 (6). e202300128. ISSN 2702-4288

Walther, T. orcid.org/0000-0003-3571-6263 and Oliver, R.A. (2024) Preface to the special issue on microscopy of semiconducting materials 2023. Journal of Microscopy, 293 (3). pp. 135-137. ISSN 0022-2720

Guo, R. and Walther, T. orcid.org/0000-0003-3571-6263 (2024) Towards quantification of doping in gallium arsenide nanostructures by low-energy scanning electron microscopy and conductive atomic force microscopy. Journal of Microscopy, 293 (3). pp. 160-168. ISSN 0022-2720

Liu, S. orcid.org/0009-0008-5660-1063, Dong, J., Ma, Z. et al. (6 more authors) (2024) The evolution of indium precipitation in gallium focused ion beam prepared samples of InGaAs/InAlAs quantum wells under electron beam irradiation. Journal of Microscopy, 293 (3). pp. 169-176. ISSN 0022-2720

Ma, Z. orcid.org/0000-0003-2508-6499, Zhang, X., Liu, P. et al. (13 more authors) (2023) Clustering in gallium ion beam sputtered compound materials driven by bond strength and interstitial/vacancy reaction. Applied Physics Letters, 123 (10). 102101. ISSN 0003-6951

Walther, T. orcid.org/0000-0003-3571-6263 (2023) Chemical structure comparison via scanning electron microscopy of spent commercial nickel–metal hydride batteries. Materials, 16 (17). 5761. ISSN 1996-1944

Deng, Y. orcid.org/0000-0002-8804-9428, Xie, N., Hu, W. orcid.org/0000-0003-0254-8363 et al. (17 more authors) (2023) Atomic plane misorientation assisted crystalline quality improvement in epitaxial growth of AlN on a nanopatterned sapphire (0001) surface for deep ultraviolet photoelectric devices. ACS Applied Nano Materials, 6 (6). pp. 4262-4270. ISSN 2574-0970

Walther, T. orcid.org/0000-0003-3571-6263 (2022) Role of Interdiffusion and segregation during the life of indium gallium arsenide quantum dots, from cradle to grave. Nanomaterials, 12 (21). 3850. ISSN 2079-4991

Walther, T. orcid.org/0000-0003-3571-6263 (2022) Measuring non-destructively the total indium content and its lateral distribution in very thin single layers or quantum dots deposited onto gallium arsenide substrates using energy-dispersive X-ray spectroscopy in a scanning electron microscope. Nanomaterials, 12 (13). 2220.

Zhong, W. and Walther, T. orcid.org/0000-0003-3571-6263 (2022) Failure analysis of some commercial spotlights based on light emitting diodes. Electronics, 11 (1). 48.

Walther, T. orcid.org/0000-0003-3571-6263 (2021) Measurement of nanometre-scale gate oxide thicknesses by energy-dispersive X-ray spectroscopy in a scanning electron microscope combined with Monte Carlo simulations. Nanomaterials, 11 (8). 2117. ISSN 2079-4991

Walther, T. orcid.org/0000-0003-3571-6263, Calahorra, Y. and Massabuau, F. (2020) Preface for the special issue on Microscopy of Semiconducting Materials 2019. Semiconductor Science and Technology, 35 (12). 120201. ISSN 0268-1242

Walther, T. orcid.org/0000-0003-3571-6263, Nutter, J., Reithmaier, J.P. et al. (1 more author) (2020) X-ray mapping in a scanning transmission electron microscope of InGaAs quantum dots with embedded fractional monolayers of aluminium. Semiconductor Science and Technology, 35 (8). 084001. ISSN 0268-1242

Walther, T. orcid.org/0000-0003-3571-6263 (2019) Measurement of diffusion and segregation in semiconductor quantum dots and quantum wells by transmission electron microscopy : a guide. Nanomaterials, 9 (6). 872.

Wang, X., Bai, J. and Walther, T. orcid.org/0000-0003-3571-6263 (2018) Self-consistent absorption correction for quantifying very noisy X-ray maps: group III nitride nanowires as an example. Journal of Microscopy, 272 (2). pp. 111-122. ISSN 0022-2720

Dimitrakopulos, G., Walther, T. orcid.org/0000-0003-3571-6263, Pinna, C. orcid.org/0000-0002-9079-1381 et al. (1 more author) (2018) Materials characterisation and modelling on the small scale. Materials Science and Technology, 34 (13). pp. 1529-1530. ISSN 0267-0836

Norris, D.J. and Walther, T. orcid.org/0000-0003-3571-6263 (2018) Stranski-Krastanow growth of (Si)Ge/Si(001): transmission electron microscopy compared with segregation theory. Materials Science and Technology, 34 (13). pp. 1539-1548. ISSN 0267-0836

Walther, T. orcid.org/0000-0003-3571-6263 (2018) Comment on 'Nanoscale mapping of optical band gaps using monochromated electron energy loss spectroscopy' by Zhan, Granerød, Venkatachalapathy, Johansen, Jensen, Kuznetsov and Prytz in Nanotechnology 28 (2017) 105703. Nanotechnology, 29 (31). 318001. ISSN 0957-4484

Wang, X., Chauvat, M.P., Ruterana, P. et al. (1 more author) (2017) Effective absorption correction for energy dispersive X-ray mapping in a scanning transmission electron microscope: analyzing the local indium distribution in rough samples of InGaN alloy layers. Journal of Microscopy, 268 (3). pp. 248-253. ISSN 0022-2720

Walther, T. orcid.org/0000-0003-3571-6263 and Jones, L. (2017) Preface to special issue on Microscopy of Semiconducting Materials 2017 (MSM-XX). Journal of Microscopy, 268 (3). pp. 221-224. ISSN 0022-2720

Walther, T. orcid.org/0000-0003-3571-6263 and Krysa, A.B. (2017) Transmission electron microscopy of AlGaAs/GaAs quantum cascade laser structures. Journal of Microscopy , 268 (3). pp. 298-304. ISSN 0022-2720

Norris, D.J., Myronov, M., Leadley, D.R. et al. (1 more author) (2017) Comparison of cross-sectional transmission electron microscope studies of thin germanium epilayers grown on differently oriented silicon wafers. Journal of Microscopy, 268 (3). pp. 288-297. ISSN 0022-2720

Angadi, V.C., Benz, F., Tischer, I. et al. (3 more authors) (2017) Evidence of terbium and oxygen co-segregation in annealed AlN:Tb. Applied Physics Letters, 110 (22). p. 222102. ISSN 0003-6951

Walther, T. orcid.org/0000-0003-3571-6263, Dunin-Borkowski, R.E., Rouviere, J.-L. et al. (1 more author) (2017) Aberration Corrected Transmission Electron Microscopy. Journal Of Materials Research, 32 (5). p. 911. ISSN 0884-2914

Walther, T. orcid.org/0000-0003-3571-6263, Wang, X., Angadi, V.C. orcid.org/0000-0002-0538-4483 et al. (3 more authors) (2016) Study of phase separation in an InGaN alloy by electron energy loss spectroscopy in an aberration corrected monochromated scanning transmission electron microscope. Journal of Materials Research. ISSN 0884-2914

Wang, X., Chauvat, M.P., Ruterana, P. et al. (1 more author) (2016) Investigation of phase separation in InGaN alloys by plasmon loss spectroscopy in TEM. MRS Advances, 1 (40). pp. 2749-2756. ISSN 2059-8521

Angadi, V. orcid.org/0000-0002-0538-4483, Abhayaratne, C. and Walther, T. orcid.org/0000-0003-3571-6263 (2016) Automated background subtraction technique for electron energy-loss spectroscopy and application to semiconductor heterostructures. Journal of Microscopy, 262 (2). pp. 157-166. ISSN 0022-2720

Walther, T. orcid.org/0000-0003-3571-6263 and Beanland, R. (2016) Preface of 19 th Microscopy of Semiconducting Materials conference. Journal of Microscopy, 262 (2). pp. 131-133. ISSN 0022-2720

Parri, M.C., Qiu, Y. and Walther, T. (2015) New pathways for improved quantification of energy-dispersive X-ray spectra of semiconductors with multiple X-ray lines from thin foils investigated in transmission electron microscopy. Journal of Microscopy, 260 (3). pp. 427-441. ISSN 1365-2818

Bazioti, C., Papadomanolaki, E., Kehagias, T. et al. (7 more authors) (2015) Defects, strain relaxation, and compositional grading in high indium content InGaN epilayers grown by molecular beam epitaxy. Journal of Applied Physics, 118 (15). ISSN 1089-7550

Wang, X., Chauvat, M.P., Ruterana, P. et al. (1 more author) (2015) Combination of electron energy-loss spectroscopy and energy dispersive x-ray spectroscopy to determine indium concentration in InGaN thin film structures. Semiconductor Science and Technology, 30 (11). 114011. ISSN 0268-1242

Kehagias, T., Florini, N., Kioseoglou, J. et al. (6 more authors) (2015) Nanostructure and strain properties of core-shell GaAs/AlGaAs nanowires. Semiconductor Science and Technology, 30 (11). ISSN 1361-6641

Walther, T. (2015) Accurate measurement of atomic segregation to grain boundaries or to planar faults by analytical transmission electron microscopy. Physica Status Solidi (c), 12 (3). 310 - 313. ISSN 1862-6351

Walther, T., Richards, R.D. and Bastiman, F. (2015) Scanning transmission electron microscopy measurement of bismuth segregation in thin Ga(As,Bi) layers grown by molecular beam epitaxy. Crystal Research and Technology, 50 (1). pp. 38-42. ISSN 1521-4079

Walther, T. and Wang, X. (2015) Self-consistent method for quantifying indium content from X-ray spectra of thick compound semiconductor specimens in a transmission electron microscope. Journal of Microscopy. ISSN 1365-2818

Walther, T. (2014) Electron microscopy of quantum dots. Journal of Microscopy, 257 (3). pp. 171-178. ISSN 1365-2818

Walther, T. (2014) What environmental transmission electron microscopy measures and how this links to diffusivity: thermodynamics versus kinetics. Journal of Microscopy, 257 (2). pp. 87-91. ISSN 0022-2720

Walther, T. and Krysa, A.B. (2014) Twinning in GaAs nanowires on patterned GaAs(111)B. Crystal Research and Technology, 50 (1). pp. 62-68. ISSN 0232-1300

Walther, T., Hopkinson, M., Daneu, N. et al. (4 more authors) (2013) How to best measure atomic sergregation to grain boundaries by analytical transmission electron microscopy. Journal of Materials Science, 49 (11). pp. 3898-3908. ISSN 0022-2461

Walther, T. orcid.org/0000-0003-3571-6263, Wolf, F., Recnik, A. et al. (1 more author) (2006) Quantitative microstructural and spectroscopic investigation of inversion domain boundaries in sintered zinc oxide ceramics doped with iron oxide. International Journal of Materials Research, 97 (7). pp. 934-942. ISSN 1862-5282

Walther, T. orcid.org/0000-0003-3571-6263 (2005) StripeTEM as a method of calculating chemical profiles across interfaces between solids or core-shell structures using electron energy-loss spectroscopic profiling. International Journal of Materials Research, 96 (5). pp. 429-437. ISSN 1862-5282

Proceedings Paper

Walther, T. orcid.org/0000-0003-3571-6263 (2019) Measuring grain boundary segregation: tomographic atom probe field ion microscopy (APFIM) vs. analytical scanning transmission electron microscopy (STEM). In: Journal of Physics: Conference Series. 19th International Conference on Extended Defects in Semiconductors (EDS2018), 24-29 Jun 2018, Thessaloniki, Greece. IOP Publishing .

Walther, T. orcid.org/0000-0003-3571-6263 and Wang, X. (2015) Self-consistent absorption correction for quantitative energy-dispersive X-ray spectroscopy of InGaN layers in analytical transmission electron microscopy. In: MacLaren, I., (ed.) Journal of Physics: Conference Series. Electron Microscopy and Analysis Group Conference (EMAG2015), 29 Jun - 03 Jul 2015, Manchester. IOP Publishing: Conference Series , Bristol .

Schymura, C., Walther, T., Kolossa, D. et al. (2 more authors) (2014) Binaural sound source localisation using a Bayesian-network-based blackboard system and hypothesis-driven feedback. In: Fourm Acusticum. 7th Forum Acusticum 2014, 07-12 Sep 2014, Krakow (Poland). European Acoustics Association .

Walther, T. orcid.org/0000-0003-3571-6263 (2003) Electron energy loss spectroscopic profiling of semiconductor hetero- and nano-structures: theory, implementation, applications. In: Cullis, A.G. and Midgley, P.A., (eds.) Microscopy of Semiconducting Materials 2003. Microscopy of Semiconducting Materials, 31 Mar - 03 Apr 2003, Cambridge, UK. CRC Press , pp. 27-32. ISBN 9781315895536

Albrecht, M., Grillo, V., Borysiuk, J. et al. (8 more authors) (2001) Correlating compositional, structural and optical properties of InGaN quantum wells by transmission electron microscopy. In: Cullis, A.G. and Hutchison, J.L., (eds.) Microscopy of Semiconducting Materials 2001. The 12th Conference on the Microscopy of Semiconducting Materials (MSM), 25-29 Mar 2001, Oxford, UK. IOP Publishing Ltd (print) / CRC Press (eBook) , pp. 267-272. ISBN 9781351074629

Walther, T. orcid.org/0000-0003-3571-6263, Cullis, A.G., Norris, D.J. et al. (1 more author) (2001) How InGaAs islands form on GaAs substrates: the missing link in the explanation of the Stranski-Krastanow transition. In: Cullis, A.G., (ed.) Microscopy of Semiconducting Materials 2001. 12th Conference on the Microscopy of Semiconducting Materials, 25-29 Mar 2001, Oxford, UK. Institute of Physics Conference Series (169). CRC Press , pp. 85-88.

Walther, T. orcid.org/0000-0003-3571-6263 and Humphreys, C.J. (1997) Quantification of the composition of silicon germanium / silicon structures by high-angle annular dark field imaging. In: Rodenburg, J.M., (ed.) Electron Microscopy and Analysis 1997: Proceedings of the Institute of Physics Electron Microscopy and Analysis Group Conference, University of Cambridge, 2-5 September 1997. Institute of Physics Electron Microscopy and Analysis Group Conference, 02-05 Sep 1997, Cambridge, United Kingdom. CRC Press , pp. 303-306. ISBN 9780750304412