Items where authors include "Vukmirovic, N."
Article
Moontragoon, P., Vukmirovic, N., Ikonic, Z. et al. (1 more author) (2009) Electronic structure and optical transitions in Sn and SnGe quantum dots in a Si matrix. Microelectronics Journal, 40 (3). pp. 483-485. ISSN 0026-2692
Vukmirovic, N., Indjin, D., Ikonic, Z. et al. (1 more author) (2008) Electron transport and terahertz gain in quantum-dot cascades. IEEE Photonics Technology Letters, 20 (2). pp. 129-131. ISSN 10411135
Fu, L., Tan, H.H., McKerracher, I. et al. (4 more authors) (2006) Effects of rapid thermal annealing on device characteristics of InGaAs/GaAs quantum dot infrared photodetectors. Journal of Applied Physics, 99 (11). 114517-(8 pages). ISSN 1089-7550
Jovanovic, V.D., Hofling, S., Indjin, D. et al. (5 more authors) (2006) Influence of doping density on electron dynamics in GaAs/AlGaAs quantum cascade lasers. Journal of Applied Physics, 99 (10). 103106-(9 pages). ISSN 1089-7550
Vukmirovic, N., Ikonic, Z., Jovanovic, V.D. et al. (2 more authors) (2005) Optically pumped intersublevel midinfrared lasers based on InAs-GaAs quantum dots. IEEE Journal of Quantum Electronics, 41 (11). pp. 1361-1368. ISSN 0018-9197
Savic, I., Milanovic, V., Vukmirovic, N. et al. (4 more authors) (2005) Magnetic field tunable terahertz quantum well infrared photodetector. Journal of Applied Physics, 98 (8). 084509-(8 pages). ISSN 1089-7550
Vukmirovic, N., Indjin, D., Jovanovic, V.D. et al. (2 more authors) (2005) Symmetry of k·p Hamiltonian in pyramidal InAs/GaAs quantum dots: Application to the calculation of electronic structure. Physical Review B: Condensed Matter and Materials Physics, 72 (7). 075356(10). ISSN 1550-235X
Vukmirovic, N., Jovanovic, V.D., Indjin, D. et al. (3 more authors) (2005) Optically pumped terahertz laser based on intersubband transitions in a GaN/AlGaN double quantum well. Journal of Applied Physics, 97 (10). 103106-(5 pages). ISSN 1089-7550
Harrison, P., Indjin, D., Jovanovic, V.D. et al. (7 more authors) (2005) A physical model of quantum cascade lasers: Application to GaAs, GaN and SiGe devices. Physica Status Solidi (A): Applied Research, 202 (6). pp. 980-986. ISSN 1521-396X
Proceedings Paper
Harrison, P., Indjin, D., Savic, I. et al. (7 more authors) (2008) On the coherence/incoherence of electron transport in semiconductor heterostructure optoelectronic devices. In: Belyanin, A.A. and Smowton, P.M., (eds.) Novel In-Plane Semiconductor Lasers VII. Novel In-Plane Semiconductor Lasers VII, 21 January 2008, San Jose, CA, USA. Proceedings of SPIE (6909). The International Society for Optical Engineering , p. 690912.