Items where authors include "Rockett, T.B.O."

Article

Rockett, T.B.O., Adham, N.A., Harun, F. et al. (2 more authors) (2022) Growth of GaAsBi/GaAs multiple quantum wells with up to 120 periods. Journal of Crystal Growth, 589. 126679. ISSN 0022-0248

Richards, R.D. orcid.org/0000-0001-7043-8372, Bailey, N.J., Liu, Y. et al. (2 more authors) (2022) GaAsBi: from molecular beam epitaxy growth to devices. physica status solidi (b), 259 (2). 2100330. ISSN 0370-1972

Bailey, N.J. orcid.org/0000-0001-8131-8544, Rockett, T.B.O., Flores, S. et al. (3 more authors) (2022) Effect of MBE growth conditions on GaAsBi photoluminescence lineshape and localised state filling. Scientific Reports, 12. 797. ISSN 2045-2322

Lai, Y. orcid.org/0000-0002-9987-0975, Wang, X., Rockett, T.B.O. et al. (2 more authors) (2022) Investigation into wind effects on fire spread on inclined wooden rods by multi-spectrum and schlieren imaging. Fire Safety Journal, 127. 103513. ISSN 0379-7112

Rockett, T.B.O., Boone, N.A., Richards, R.D. orcid.org/0000-0001-7043-8372 et al. (1 more author) (2021) Thermal imaging metrology using high dynamic range near-infrared photovoltaic-mode camera. Sensors, 21 (18). 6151. ISSN 1424-8220

Liu, Y., Yi, X., Bailey, N.J. et al. (6 more authors) (2021) Valence band engineering of GaAsBi for low noise avalanche photodiodes. Nature Communications, 12 (1). 4784.

Richards, R.D. orcid.org/0000-0001-7043-8372, Harun, F., Nawawi, M.R.M. et al. (3 more authors) (2021) Temperature and band gap dependence of GaAsBi p-i-n diode current–voltage behaviour. Journal of Physics D: Applied Physics, 54 (19). 195102. ISSN 0022-3727

Lai, Y., Wang, X., Rockett, T.B.O. et al. (3 more authors) (2020) The effect of preheating on fire propagation on inclined wood by multi-spectrum and schlieren visualisation. Fire Safety Journal, 118. 103223. ISSN 0379-7112

Richards, R.D. orcid.org/0000-0001-7043-8372, Rockett, T.B.O., Nawawi, M.R.M. et al. (6 more authors) (2018) Light-biased IV characteristics of a GaAsBi/GaAs multiple quantum well pin diode at low temperature. Semiconductor Science and Technology, 33 (9). 094008. ISSN 0268-1242

Gelczuk, Ł., Kopaczek, J., Rockett, T.B.O. et al. (2 more authors) (2017) Deep-level defects in n-type GaAsBi alloys grown by molecular beam epitaxy at low temperature and their influence on optical properties. Scientific Reports, 7. 12824. ISSN 2045-2322

Proceedings Paper

Rockett, T.B.O., Richards, R.D., Gu, Y. et al. (4 more authors) (2017) Influence of Growth Conditions on the Structural and Opto-electronic Quality of GaAsBi. In: Journal of Crystal Growth. MBE 2016 - 19th International Conference on Molecular Beam Epitaxy, 04/09/2016 - 09/09/2016, Montpellier, France. Elsevier .