Items where authors include "Roberts, J.W."

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Partida-Manzanera, T., Zaidi, Z.H., Roberts, J.W. et al. (6 more authors) (2019) Comparison of atomic layer deposited Al2O3 and (Ta2O5)0.12(Al2O3)0.88 gate dielectrics on the characteristics of GaN-capped AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors. Journal of Applied Physics, 126 (3). 034102. ISSN 0021-8979

Zaidi, Z.H., Lee, K.B. orcid.org/0000-0002-5374-2767, Roberts, J.W. et al. (9 more authors) (2018) Effects of surface plasma treatment on threshold voltage hysteresis and instability in metal-insulator-semiconductor (MIS) AlGaN/GaN heterostructure HEMTs. Journal of Applied Physics , 123 (18). 184503. ISSN 0021-8979

Roberts, J.W., Chalker, P.R., Lee, K.B. orcid.org/0000-0002-5374-2767 et al. (6 more authors) (2016) Control of threshold voltage in E-mode and D-mode GaN-on-Si metal-insulator-semiconductor heterostructure field effect transistors by in-situ fluorine doping of atomic layer deposition Al2O3 gate dielectrics. Applied Physics Letters, 108 (7). 072901. ISSN 0003-6951

Alner, G.J., Araujo, H.M., Arnison, G.J. et al. (46 more authors) (2005) Limits on WIMP cross-sections from the NAIAD experiment at the boulby underground laboratory. Physics Letters B, 616 (1-2). pp. 17-24. ISSN 0370-2693

Kudryavtsev, V.A. orcid.org/0000-0002-7018-5827, Lehner, M.J., Peak, C.D. et al. (9 more authors) (1999) Characteristics of alpha, gamma and nuclear recoil pulses from NaI(Tl) at 10-100 keV relevant to dark matter searches. Physics Letters B, 452 (1-2). pp. 167-172. ISSN 0370-2693

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