Items where authors include "Park, J.-S."

Article

Alghamdi, F., Zeng, H., Boras, G. et al. (17 more authors) (2026) Intrinsic GaAs-engineered p-i-n GaAs/GaAs/AlGaAs nanowires for improved-performance solar water splitting. Optics Continuum, 5 (4). pp. 954-966. ISSN 2578-7519

Jia, H., Park, J.-S., Li, J. et al. (17 more authors) (2026) InAs/InAlGaAs Quantum Dot Lasers on InP and Si. IEEE Journal of Selected Topics in Quantum Electronics, 32 (2). 1900112. ISSN 1077-260X

Wang, Y., Jia, H., Park, J.-S. et al. (24 more authors) (2026) Mid-infrared InAs/InP quantum-dot lasers. Light: Science & Applications, 15. 64. ISSN 2047-7538

Yin, Z. orcid.org/0000-0002-5288-8297, Zeng, H. orcid.org/0000-0002-7328-9576, Boras, G. et al. (13 more authors) (2025) As-flux-induced diameter control in GaAs nanowires. The Journal of Physical Chemistry C, 129 (39). pp. 17607-17615. ISSN 1932-7447

Dear, C., Park, J.-S., Jia, H. et al. (10 more authors) (2025) The effect of rapid thermal annealing on 1.55 μm InAs/InP quantum dots. Journal of Physics D, 58 (12). 125104. ISSN 0022-3727

Yuan, J., Dear, C., Jia, H. et al. (12 more authors) (2024) Indium-flush technique for C-band InAs/InP quantum dots. APL Materials, 12 (12). 121109. ISSN 2166-532X

Mtunzi, M. orcid.org/0009-0000-3924-2726, Jia, H. orcid.org/0000-0002-8325-3948, Hou, Y. et al. (16 more authors) (2024) High-quality germanium growth on (111)-faceted V-groove silicon by molecular beam epitaxy. Journal of Physics D: Applied Physics, 57 (25). 255101. ISSN 0022-3727