Items where authors include "Nishizawa, S.-I."

Article

Luo, P, Madathil, S orcid.org/0000-0001-6832-1300, Saito, W. et al. (1 more author) (2022) Investigation of turn-on performance in 1.2 kV MOS-bipolar devices. Japanese Journal of Applied Physics, 61 (SC). SC0801. ISSN 0021-4922

Luo, P., Madathil, S. orcid.org/0000-0001-6832-1300, Nishizawa, S.-I. et al. (1 more author) (2021) Turn-off dV/dt controllability in 1.2kV MOS-bipolar devices. IEEE Transactions on Power Electronics, 36 (3). pp. 3304-3311. ISSN 0885-8993

Proceedings Paper

Luo, P., Madathil, S.N.E. orcid.org/0000-0001-6832-1300, Nishizawa, S.-I. et al. (1 more author) (2020) Dynamic avalanche free super junction-TCIGBT for high power density operation. In: 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD). 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), 13-18 Sep 2020, Vienne, Austria (online). IEEE . ISBN 9781728148373

Luo, P., Madathil, S.N.E. orcid.org/0000-0001-6832-1300, Nishizawa, S.-I. et al. (1 more author) (2020) High dV/dt controllability of 1.2kV Si-TCIGBT for high flexibility design with ultra-low loss operation. In: Proceedings of 2020 IEEE Applied Power Electronics Conference and Exposition (APEC). 2020 IEEE Applied Power Electronics Conference and Exposition (APEC), 15-19 Mar 2020, New Orleans, LA, USA. Institute of Electrical and Electronics Engineers (IEEE) , pp. 686-689. ISBN 9781728148304