Items where authors include "Ni, R."

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Article

Esendag, V. orcid.org/0000-0002-4483-8759, Feng, P., Zhu, C. et al. (3 more authors) (2022) Influence of a two-dimensional growth mode on electrical properties of the GaN buffer in an AlGaN/GaN high electron mobility transistor. Materials, 15 (17). 6043. ISSN 1996-1944

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