Items where authors include "Ng, B.K."
Article
Ng, B.K., David, J.P.R., Tozer, R.C. et al. (4 more authors) (2003) Nonlocal effects in thin 4H-SiC UV avalanche photodiodes. IEEE Transactions on Electron Devices, 50 (8). pp. 1724-1732. ISSN 0018-9383
Hambleton, P.J., Ng, B.K., Plimmer, S.A. et al. (2 more authors) (2003) The effects of nonlocal impact ionization on the speed of avalanche photodiodes. IEEE Transactions on Electron Devices, 50 (2). pp. 347-351. ISSN 0018-9383
Ng, B.K., David, J.P.R., Rees, G.J. et al. (3 more authors) (2002) Avalanche multiplication and breakdown in AlxGa1-xAs (x < 0-9). IEEE Transactions on Electron Devices, 49 (12). pp. 2349-2351. ISSN 0018-9383
Ng, B.K., Yan, F., David, J.P.R. et al. (4 more authors) (2002) Multiplication and excess noise characteristics of thin 4H-SiC UV avalanche photodiodes. IEEE Photonics Technology Letters, 14 (9). pp. 1342-1344. ISSN 1041-1135
Ng, J.S., Tan, C.H., Ng, B.K. et al. (5 more authors) (2002) Effect of dead space on avalanche speed. IEEE Transactions on Electron Devices, 49 (4). pp. 544-549. ISSN 0018-9383
Ng, B.K., David, J.P.R., Tozer, R.C. et al. (3 more authors) (2002) Excess noise characteristics of Al0.8Ga0.2As avalanche photodiodes. IEEE Photonics Technology Letters, 14 (4). pp. 522-524. ISSN 1041-1135
Ng, B.K., David, J.P.R., Plimmer, S.A. et al. (4 more authors) (2001) Avalanche multiplication characteristics of Al0.8Ga0.2As diodes. IEEE Transactions on Electron Devices, 48 (10). pp. 2198-2204. ISSN 0018-9383