Items where authors include "Naghibi, J."
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Naghibi, J., Mohsenzade, S., Mehran, K. et al. (1 more author) (2023) Gate oxide degradation condition monitoring technique for high-frequency applications of silicon carbide power MOSFETs. IEEE Transactions on Power Electronics, 38 (1). pp. 1079-1091. ISSN 0885-8993
Naghibi, J., Mehran, K. and Foster, M.P. orcid.org/0000-0002-8565-0541 (2021) High-frequency non-invasive magnetic field-based condition monitoring of SiC power MOSFET modules. Energies, 14 (20). 6720.
Proceedings Paper
Naghibi, J., Mohsenzade, S., Iqbal, S. et al. (2 more authors) (2022) On the effect of SiC power MOSFET gate oxide degradation in high frequency phase leg-based applications. In: IEEE Energy Conversion Congress and Expo - ECCE 2022. IEEE Energy Conversion Congress and Expo - ECCE 2022, 09-13 Oct 2022, Detroit, Michigan, USA. Institute of Electrical and Electronics Engineers , pp. 1-6. ISBN 978-1-7281-9387-8
Naghibi, J., Mohsenzade, S., Mehran, K. et al. (1 more author) (2022) Evaluation of drain-source voltage in switch transient time intervals as gate oxide degradation precursor of SiC power MOSFETs. In: Proceedings of 2022 24th European Conference on Power Electronics and Applications (EPE'22 ECCE Europe). 2022 24th European Conference on Power Electronics and Applications (EPE'22 ECCE Europe), 05-09 Sep 2022, Hanover, Germany. IEEE , Hannover, Germany . ISBN 9781665487009