Items where authors include "Madathil, S.N.E."

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Number of items: 8.

Article

Du, Y., Madathil, S.N.E. orcid.org/0000-0001-6832-1300, Kawai, H. et al. (2 more authors) (2023) Effect of SiO2 surface passivation on the performance of GaN polarization superjunction heterojunction field effect transistors. physica status solidi (a). ISSN 1862-6300

Sheikhan, A. orcid.org/0000-0002-2207-1593, Madathil, S.N.E., Kawai, H. et al. (2 more authors) (2023) Evaluation of turn-off dV/dt controllability and switching characteristics of 1.2 kV GaN polarisation superjunction heterostructure field-effect transistors. Japanese Journal of Applied Physics, 62. 064502. ISSN 0021-4922

Luo, P. and Madathil, S.N.E. orcid.org/0000-0001-6832-1300 (2020) 3-D scaling rules for high voltage planar clustered IGBTs. IEEE Transactions on Electron Devices, 67 (12). pp. 5613-5620. ISSN 0018-9383

Luo, P. and Madathil, S.N.E. orcid.org/0000-0001-6832-1300 (2020) Theoretical analysis of on-state performance limit of 4H-SiC IGBT in field-stop technology. IEEE Transactions on Electron Devices, 67 (12). pp. 5621-5627. ISSN 0018-9383

Luo, P., Long, H.Y., Sweet, M.R. et al. (2 more authors) (2018) Numerical Analysis of 3-Dimensional Scaling Rules on a 1.2-kV Trench Clustered IGBT. IEEE Transactions on Electron Devices, 65 (4). pp. 1440-1446. ISSN 0018-9383

Proceedings Paper

Luo, P., Madathil, S.N.E. orcid.org/0000-0001-6832-1300 and de Souza, P. (2021) Experimental Demonstration of a 1.2-kV Trench Clustered Insulated Gate Bipolar Transistor in Field-Stop Technology. In: Proceedings of 2021 IEEE 12th Energy Conversion Congress & Exposition - Asia (ECCE-Asia). 2021 IEEE 12th Energy Conversion Congress & Exposition - Asia (ECCE-Asia), 24-27 May 2021, Singapore, Singapore. IEEE , pp. 1319-1324. ISBN 9781728163451

Luo, P., Madathil, S.N.E. orcid.org/0000-0001-6832-1300, Nishizawa, S.-I. et al. (1 more author) (2020) Dynamic avalanche free super junction-TCIGBT for high power density operation. In: 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD). 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), 13-18 Sep 2020, Vienne, Austria (online). IEEE . ISBN 9781728148373

Luo, P., Madathil, S.N.E. orcid.org/0000-0001-6832-1300, Nishizawa, S.-I. et al. (1 more author) (2020) High dV/dt controllability of 1.2kV Si-TCIGBT for high flexibility design with ultra-low loss operation. In: Proceedings of 2020 IEEE Applied Power Electronics Conference and Exposition (APEC). 2020 IEEE Applied Power Electronics Conference and Exposition (APEC), 15-19 Mar 2020, New Orleans, LA, USA. Institute of Electrical and Electronics Engineers (IEEE) , pp. 686-689. ISBN 9781728148304

This list was generated on Sun Mar 24 06:26:08 2024 GMT.