Items where authors include "Lee, K.B."
Article
Yin, Y., Pinchbeck, J., O'Regan, C. et al. (3 more authors) (2022) Fabrication of semi-polar (11-22) GaN V-groove MOSFET using wet etching trench opening technique. IEEE Electron Device Letters, 43 (10). pp. 1641-1644. ISSN 0741-3106
Yin, Y. and Lee, K.B. orcid.org/0000-0002-5374-2767 (2022) High-performance enhancement-mode p-channel GaN MISFETs with steep subthreshold swing. IEEE Electron Device Letters, 43 (4). pp. 533-536. ISSN 0741-3106
Wohlfahrt, M., Uren, M.J., Yin, Y. et al. (2 more authors) (2021) Vertical field inhomogeneity associated with threading dislocations in GaN high electron mobility transistor epitaxial stacks. Applied Physics Letters, 119 (24). 243502. ISSN 0003-6951
Pinchbeck, J., Lee, K.B. orcid.org/0000-0002-5374-2767, Jiang, S. et al. (1 more author) (2021) Dual metal gate AlGaN/GaN high electron mobility transistors with improved transconductance and reduced short channel effects. Journal of Physics D: Applied Physics, 54 (10). 105104. ISSN 0022-3727
Jiang, S., Lee, K.B. orcid.org/0000-0002-5374-2767, Pinchbeck, J. et al. (2 more authors) (2020) A 624 V 5 A all‐GaN integrated cascode for power‐switching applications. physica status solidi (a), 217 (7). 1900783. ISSN 1862-6300
Partida-Manzanera, T., Zaidi, Z.H., Roberts, J.W. et al. (6 more authors) (2019) Comparison of atomic layer deposited Al2O3 and (Ta2O5)0.12(Al2O3)0.88 gate dielectrics on the characteristics of GaN-capped AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors. Journal of Applied Physics, 126 (3). 034102. ISSN 0021-8979
Alt, A., Hirshy, H., Jiang, S. et al. (6 more authors) (2019) Analysis of gain variation with changing supply voltages in GaN HEMTs for envelope tracking power amplifiers. IEEE Transactions on Microwave Theory and Techniques, 67 (7). pp. 2495-2504. ISSN 0018-9480
Jiang, S. orcid.org/0000-0002-3687-1882, Lee, K.B. orcid.org/0000-0002-5374-2767, Zaidi, Z.H. et al. (3 more authors) (2019) Field plate designs in all-GaN cascode heterojunction field-effect transistors. IEEE Transactions on Electron Devices, 66 (4). pp. 1688-1693. ISSN 0018-9383
Singh, M., Karboyan, S., Uren, M.J. et al. (4 more authors) (2019) Lateral charge spreading and device-to-device coupling in C-doped AlGaN/GaN-on-Si wafers. Microelectronics Reliability, 95. pp. 81-86. ISSN 0026-2714
Cai, Y. orcid.org/0000-0002-2004-0881, Gong, Y., Bai, J. et al. (5 more authors) (2018) Controllable uniform green light emitters enabled by circular HEMT-LED devices. IEEE Photonics Journal, 10 (5).
Choi, F.S., Griffiths, J.T., Ren, C. et al. (7 more authors) (2018) Vertical leakage mechanism in GaN on Si high electron mobility transistor buffer layers. Journal of Applied Physics, 124 (5). 055702. ISSN 0021-8979
Zaidi, Z.H., Lee, K.B. orcid.org/0000-0002-5374-2767, Roberts, J.W. et al. (9 more authors) (2018) Effects of surface plasma treatment on threshold voltage hysteresis and instability in metal-insulator-semiconductor (MIS) AlGaN/GaN heterostructure HEMTs. Journal of Applied Physics , 123 (18). 184503. ISSN 0021-8979
Amano, H., Baines, Y., Borga, M. et al. (39 more authors) (2018) The 2018 GaN Power Electronics Roadmap. Journal of Physics D: Applied Physics, 51. 163001. ISSN 0022-3727
Jiang, S., Lee, K.B., Guiney, I. et al. (7 more authors) (2017) All-GaN Integrated Cascode Heterojunction Field Effect Transistors. IEEE Transactions on Power Electronics, 32 (11). pp. 8743-8750. ISSN 0885-8993
Qian, H. orcid.org/0000-0003-4597-6325, Lee, K.B., Vajargah, S.H. et al. (8 more authors) (2017) Novel GaN-based vertical heterostructure field effect transistor structures using crystallographic KOH etching and overgrowth. Journal of Crystal Growth, 459. pp. 185-188. ISSN 0022-0248
Qian, H., Lee, K.B., Hosseini Vajargah, S. et al. (7 more authors) (2016) Characterization of p-GaN1-xAsx/n-GaN PN junction diodes. Semiconductor Science and Technology, 31 (6). 065020. ISSN 0268-1242
Roberts, J.W., Chalker, P.R., Lee, K.B. orcid.org/0000-0002-5374-2767 et al. (6 more authors) (2016) Control of threshold voltage in E-mode and D-mode GaN-on-Si metal-insulator-semiconductor heterostructure field effect transistors by in-situ fluorine doping of atomic layer deposition Al2O3 gate dielectrics. Applied Physics Letters, 108 (7). 072901. ISSN 0003-6951
Lee, K.B., Guiney, I., Jiang, S. et al. (7 more authors) (2015) Enhancement-mode metal-insulator-semiconductor GaN/AlInN/GaN heterostructure field-effect transistors on Si with a threshold voltage of +3.0V and blocking voltage above 1000V. Applied Physics Express, 8 (3). 036502. ISSN 1882-0778
Zaidi, Z.H., Lee, K.B., Guiney, I. et al. (5 more authors) (2014) Sulfuric acid and hydrogen peroxide surface passivation effects on AlGaN/GaN high electron mobility transistors. Journal of Applied Physics, 116. 244501. ISSN 0021-8979
Proceedings Paper
Alvarez, B., Francis, D., Faili, F. et al. (4 more authors) (2016) Elimination of leakage in GaN-on-diamond. In: Compound Semiconductor Integrated Circuit Symposium (CSICS), 2016 IEEE. 2016 IEEE CSIC Symposium, 23–26 October 2016, Austin, TX, USA. IEEE , pp. 114-117.
Chatterjee, I., Uren, M.J., Pooth, A. et al. (9 more authors) (2016) Impact of Buffer Charge on the Reliability of Carbon Doped AlGaN/GaN-on-Si HEMTs. In: 2016 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS). 2016 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS), 17-21 Apr 2016, Pasadena, USA. IEEE .