Items where authors include "Kawai, H."

Article

Du, Y., Madathil, S.N.E. orcid.org/0000-0001-6832-1300, Kawai, H. et al. (2 more authors) (2023) Effect of SiO2 surface passivation on the performance of GaN polarization superjunction heterojunction field effect transistors. physica status solidi (a). ISSN 1862-6300

Sheikhan, A. orcid.org/0000-0002-2207-1593, Madathil, S.N.E., Kawai, H. et al. (2 more authors) (2023) Evaluation of turn-off dV/dt controllability and switching characteristics of 1.2 kV GaN polarisation superjunction heterostructure field-effect transistors. Japanese Journal of Applied Physics, 62. 064502. ISSN 0021-4922

Sheikhan, A., Narayanankutty, G., Madathil, S. orcid.org/0000-0001-6832-1300 et al. (3 more authors) (2023) Analysis of 1.2kV GaN polarisation superjunction diode surge current capability. Japanese Journal of Applied Physics, 62 (1). 014501. ISSN 0021-4922

Du, Y., Yan, H., Luo, P. et al. (5 more authors) (2023) Investigation on shift in threshold voltages of 1.2 kV GaN polarization superjunction (PSJ) HFETs. IEEE Transactions on Electron Devices, 70 (1). pp. 178-184. ISSN 0018-9383

Unni, V., Long, H.Y., Yan, H. et al. (3 more authors) (2018) Analysis of drain current saturation behaviour in GaN polarisation super junction HFETs. IET Power Electronics, 11 (14). pp. 2198-2203. ISSN 1755-4535

Amano, H., Baines, Y., Borga, M. et al. (39 more authors) (2018) The 2018 GaN Power Electronics Roadmap. Journal of Physics D: Applied Physics, 51. 163001. ISSN 0022-3727

Kawai, H., Yagi, S., Hirata, S. et al. (7 more authors) (2017) Low cost high voltage GaN polarization superjunction field effect transistors. Physica Status Solidi (a), 214 (8). 1600834. ISSN 1862-6300