Items where authors include "Humphreys, C.J."
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Zaidi, Z.H., Lee, K.B. orcid.org/0000-0002-5374-2767, Roberts, J.W. et al. (9 more authors) (2018) Effects of surface plasma treatment on threshold voltage hysteresis and instability in metal-insulator-semiconductor (MIS) AlGaN/GaN heterostructure HEMTs. Journal of Applied Physics , 123 (18). 184503. ISSN 0021-8979
Tang, F.Z., Lee, K. orcid.org/0000-0002-5374-2767, Guiney, I. et al. (11 more authors) (2018) Nanoscale structural and chemical analysis of F-implanted enhancement-mode InAlN/GaN heterostructure field effect transistors. Journal of Applied Physics, 123 (2). 024902. ISSN 0021-8979
Jiang, S., Lee, K.B., Guiney, I. et al. (7 more authors) (2017) All-GaN Integrated Cascode Heterojunction Field Effect Transistors. IEEE Transactions on Power Electronics, 32 (11). pp. 8743-8750. ISSN 0885-8993
Qian, H. orcid.org/0000-0003-4597-6325, Lee, K.B., Vajargah, S.H. et al. (8 more authors) (2017) Novel GaN-based vertical heterostructure field effect transistor structures using crystallographic KOH etching and overgrowth. Journal of Crystal Growth, 459. pp. 185-188. ISSN 0022-0248
Kim, J-Y., Ionescu, A., Mansell, R. et al. (11 more authors) (2017) Structural and magnetic properties of ultra-thin Fe films on metal-organic chemical vapour deposited GaN(0001). Journal of Applied Physics, 121 (4). 043904. ISSN 0021-8979
Roberts, J.W., Chalker, P.R., Lee, K.B. orcid.org/0000-0002-5374-2767 et al. (6 more authors) (2016) Control of threshold voltage in E-mode and D-mode GaN-on-Si metal-insulator-semiconductor heterostructure field effect transistors by in-situ fluorine doping of atomic layer deposition Al2O3 gate dielectrics. Applied Physics Letters, 108 (7). 072901. ISSN 0003-6951
Lee, K.B., Guiney, I., Jiang, S. et al. (7 more authors) (2015) Enhancement-mode metal-insulator-semiconductor GaN/AlInN/GaN heterostructure field-effect transistors on Si with a threshold voltage of +3.0V and blocking voltage above 1000V. Applied Physics Express, 8 (3). 036502. ISSN 1882-0778
Zaidi, Z.H., Lee, K.B., Guiney, I. et al. (5 more authors) (2014) Sulfuric acid and hydrogen peroxide surface passivation effects on AlGaN/GaN high electron mobility transistors. Journal of Applied Physics, 116. 244501. ISSN 0021-8979
Proceedings Paper
Chatterjee, I., Uren, M.J., Pooth, A. et al. (9 more authors) (2016) Impact of Buffer Charge on the Reliability of Carbon Doped AlGaN/GaN-on-Si HEMTs. In: 2016 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS). 2016 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS), 17-21 Apr 2016, Pasadena, USA. IEEE .
Walther, T. orcid.org/0000-0003-3571-6263 and Humphreys, C.J. (1997) Quantification of the composition of silicon germanium / silicon structures by high-angle annular dark field imaging. In: Rodenburg, J.M., (ed.) Electron Microscopy and Analysis 1997: Proceedings of the Institute of Physics Electron Microscopy and Analysis Group Conference, University of Cambridge, 2-5 September 1997. Institute of Physics Electron Microscopy and Analysis Group Conference, 02-05 Sep 1997, Cambridge, United Kingdom. CRC Press , pp. 303-306. ISBN 9780750304412