Items where authors include "Ghasemi, Arsham"

Article

Nawa, Kenji, Kepaptsoglou, Demie orcid.org/0000-0003-0499-0470, Ghasemi, Arsham et al. (10 more authors) (2021) Modification of the van der Waals interaction at the ${\mathrm{Bi}}_{2}{\mathrm{Te}}_{3}$ and Ge(111) interface. PHYSICAL REVIEW MATERIALS. ISSN 2475-9953

Lazarov, Vlado orcid.org/0000-0002-4314-6865, Kuerbanjiang, Balati orcid.org/0000-0001-6446-8209, Ghasemi, Arsham et al. (8 more authors) (2018) Correlation between spin transport signal and Heusler/semiconductor interface quality in lateral spin-valve devices. Physical Review B. 115304. ISSN 2469-9969

Kuerbanjiang, Balati orcid.org/0000-0001-6446-8209, Love, Christopher, Kepaptsoglou, Demie orcid.org/0000-0003-0499-0470 et al. (7 more authors) (2018) Effect of annealing on the structure and magnetic properties of Co2FeAl0.5Si0.5 thin films on Ge(111). JOURNAL OF ALLOYS AND COMPOUNDS. ISSN 0925-8388

Glover, Stephanie Elizabeth, Saerbeck, Thomas, Kuerbanjiang, Balati orcid.org/0000-0001-6446-8209 et al. (8 more authors) (2018) Magnetic and structural depth profiles of Heusler alloy Co2FeAl0.5Si0.5 epitaxial films on Si(111). Journal of Physics: Condensed Matter. ISSN 1361-648X

Ghasemi, Arsham, Kepaptsoglou, Demie orcid.org/0000-0003-0499-0470, Galindo, Pedro L. et al. (3 more authors) (2017) Van der Waals epitaxy between the highly lattice mismatched Cu-doped FeSe and Bi2Te3. NPG Asia Materials. e402. ISSN 1884-4057

Nedelkoski, Zlatko, Sanchez, Ana M., Ghasemi, Arsham et al. (5 more authors) (2016) The antiphase boundary in half-metallic Heusler alloy Co2Fe(Al,Si):atomic structure, spin polarization reversal, and domain wall effects. Applied Physics Letters. 222405. ISSN 0003-6951

Ghasemi, Arsham, Kepaptsoglou, D, Figueroa, A. I. et al. (7 more authors) (2016) Experimental and density functional study of Mn doped Bi2Te3 topological insulator. Materials. 1.4971354. p. 126103. ISSN 1996-1944

Nedelkoski, Zlatko, Kuerbanjiang, Balati orcid.org/0000-0001-6446-8209, Glover, Stephanie E et al. (12 more authors) (2016) Realisation of magnetically and atomically abrupt half-metal/semiconductor interface: Co2FeSi0.5Al0.5/Ge(111):Co2FeSi0.5Al0.5/Ge(111). Scientific Reports. 37282. p. 37282. ISSN 2045-2322

Kuerbanjiang, Balati orcid.org/0000-0001-6446-8209, Nedelkoski, Zlatko, Kepaptsoglou, Demie et al. (11 more authors) (2016) The role of chemical structure on the magnetic and electronic properties of Co2FeAl0.5Si0.5/Si(111) interface. Applied Physics Letters. 172412. ISSN 0003-6951