Items where authors include "Fletcher, P."

Article

Fletcher, P., Martínez de Arriba, G., Tian, Y. et al. (5 more authors) (2022) Optical characterisation of InGaN-based microdisk arrays with nanoporous GaN/GaN DBRs. Journal of Physics D: Applied Physics, 55 (46). 464001. ISSN 0022-3727

Esendag, V. orcid.org/0000-0002-4483-8759, Bai, J., Fletcher, P. et al. (4 more authors) (2021) Investigation of electrical properties of InGaN based micro light emitting diode (µLED) arrays achieved by direct epitaxy. physica status solidi (a) – applications and materials science, 218 (24). 2100474. ISSN 1862-6300

Zhao, X., Huang, K., Bruckbauer, J. et al. (9 more authors) (2020) Influence of an InGaN superlattice pre-layer on the performance of semi-polar (11–22) green LEDs grown on silicon. Scientific Reports, 10 (1). 12650. ISSN 2045-2322

Bai, J., Cai, Y. orcid.org/0000-0002-2004-0881, Feng, P. et al. (4 more authors) (2020) Ultrasmall, ultracompact and ultrahigh efficient InGaN micro light emitting diodes (μLEDs) with narrow spectral line width. ACS Nano, 14 (6). pp. 6906-6911. ISSN 1936-0851

Jiang, S., Cai, Y., Feng, P. et al. (6 more authors) (2020) Exploring an approach toward the intrinsic limits of GaN electronics. ACS Applied Materials & Interfaces, 12 (11). pp. 12949-12954. ISSN 1944-8244

Bai, J., Cai, Y., Feng, P. et al. (4 more authors) (2020) A direct epitaxial approach to achieving ultrasmall and ultrabright InGaN micro light-emitting diodes (μLEDs). ACS Photonics, 7 (2). pp. 411-415. ISSN 2330-4022

Bai, J., Jiu, L., Poyiatzis, N. et al. (3 more authors) (2019) Optical and polarization properties of nonpolar InGaN-based light-emitting diodes grown on micro-rod templates. Scientific Reports, 9 (1). 9770. ISSN 2045-2322