Items where authors include "Feng, P."

Article

Fletcher, P., Martínez de Arriba, G., Tian, Y. et al. (5 more authors) (2022) Optical characterisation of InGaN-based microdisk arrays with nanoporous GaN/GaN DBRs. Journal of Physics D: Applied Physics, 55 (46). 464001. ISSN 0022-3727

Zhu, C., Xu, C., Feng, P. et al. (4 more authors) (2022) A comparison study of InGaN/GaN multiple quantum wells grown on (111) silicon and (0001) sapphire substrates under identical conditions. Journal of Physics D: Applied Physics, 55 (44). 444003. ISSN 0022-3727

Esendag, V. orcid.org/0000-0002-4483-8759, Feng, P., Zhu, C. et al. (3 more authors) (2022) Influence of a two-dimensional growth mode on electrical properties of the GaN buffer in an AlGaN/GaN high electron mobility transistor. Materials, 15 (17). 6043. ISSN 1996-1944

Feng, P., Xu, C., Bai, J. et al. (4 more authors) (2022) A simple approach to achieving ultrasmall III-nitride microlight-emitting diodes with red emission. ACS Applied Electronic Materials, 4 (6). pp. 2581-3165. ISSN 2637-6113

Martinez de Arriba, G., Feng, P., Xu, C. et al. (3 more authors) (2022) Simple approach to mitigate the emission wavelength instability of III-nitride μLED arrays. ACS Photonics, 9 (6). pp. 2073-2078.

Tian, Y., Feng, P., Zhu, C. et al. (5 more authors) (2022) Nearly lattice-matched GaN distributed Bragg reflectors with enhanced performance. Materials, 15 (10). 3536.

Esendag, V. orcid.org/0000-0002-4483-8759, Bai, J., Fletcher, P. et al. (4 more authors) (2021) Investigation of electrical properties of InGaN based micro light emitting diode (µLED) arrays achieved by direct epitaxy. physica status solidi (a) – applications and materials science, 218 (24). 2100474. ISSN 1862-6300

Chen, Z., Feng, P., Becker, B. et al. (11 more authors) (2021) Neural connectome prospectively encodes the risk of post-traumatic stress disorder (PTSD) symptom during the COVID-19 pandemic. Neurobiology of Stress, 15. 100378. ISSN 2352-2895

Cai, Y., Zhu, C., Zhong, W. et al. (3 more authors) (2021) Monolithically integrated μLEDs/HEMTs microdisplay on a single chip by a direct epitaxial approach. Advanced Materials Technologies, 6 (6). 2100214. ISSN 2365-709X

Cai, Y. orcid.org/0000-0002-2004-0881, Haggar, J.I.H., Zhu, C. et al. (3 more authors) (2021) Direct epitaxial approach to achieve a monolithic on-chip integration of a HEMT and a single micro-LED with a high-modulation bandwidth. ACS Applied Electronic Materials, 3 (1). pp. 445-450. ISSN 2637-6113

Coulon, P-M., Feng, P., Wang, T. orcid.org/0000-0001-5976-4994 et al. (1 more author) (2020) Impact of inductively coupled plasma etching conditions on the formation of semi-polar ( 11 2 ¯ 2 ) and non-polar ( 11 2 ¯ 0 ) GaN nanorods. Nanomaterials, 10 (12). 2562.

Coulon, P-M., Feng, P., Damilano, B. et al. (3 more authors) (2020) Influence of the reactor environment on the selective area thermal etching of GaN nanohole arrays. Scientific Reports, 10 (1). 5642. ISSN 2045-2322

Zhao, X., Huang, K., Bruckbauer, J. et al. (9 more authors) (2020) Influence of an InGaN superlattice pre-layer on the performance of semi-polar (11–22) green LEDs grown on silicon. Scientific Reports, 10 (1). 12650. ISSN 2045-2322

Bai, J., Cai, Y. orcid.org/0000-0002-2004-0881, Feng, P. et al. (4 more authors) (2020) Ultrasmall, ultracompact and ultrahigh efficient InGaN micro light emitting diodes (μLEDs) with narrow spectral line width. ACS Nano, 14 (6). pp. 6906-6911. ISSN 1936-0851

Jiang, S., Cai, Y., Feng, P. et al. (6 more authors) (2020) Exploring an approach toward the intrinsic limits of GaN electronics. ACS Applied Materials & Interfaces, 12 (11). pp. 12949-12954. ISSN 1944-8244

Bai, J., Cai, Y., Feng, P. et al. (4 more authors) (2020) A direct epitaxial approach to achieving ultrasmall and ultrabright InGaN micro light-emitting diodes (μLEDs). ACS Photonics, 7 (2). pp. 411-415. ISSN 2330-4022