Items where authors include "Cullis, A.G."

Article

Califano, M., Vinh, N.Q., Phillips, P.J. et al. (10 more authors) (2007) Interwell relaxation times in p-Si/SiGe asymmetric quantum well structures: the role of interface roughness. Physical Review B, 75 (4). Art. No. 045338. ISSN 1550-235x

Proceedings Paper

Walther, T. orcid.org/0000-0003-3571-6263, Cullis, A.G., Norris, D.J. et al. (1 more author) (2001) How InGaAs islands form on GaAs substrates: the missing link in the explanation of the Stranski-Krastanow transition. In: Cullis, A.G., (ed.) Microscopy of Semiconducting Materials 2001. 12th Conference on the Microscopy of Semiconducting Materials, 25-29 Mar 2001, Oxford, UK. Institute of Physics Conference Series (169). CRC Press , pp. 85-88.