Items where authors include "Chalker, P.R."

Article

Partida-Manzanera, T., Zaidi, Z.H., Roberts, J.W. et al. (6 more authors) (2019) Comparison of atomic layer deposited Al2O3 and (Ta2O5)0.12(Al2O3)0.88 gate dielectrics on the characteristics of GaN-capped AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors. Journal of Applied Physics, 126 (3). 034102. ISSN 0021-8979

Zaidi, Z.H., Lee, K.B. orcid.org/0000-0002-5374-2767, Roberts, J.W. et al. (9 more authors) (2018) Effects of surface plasma treatment on threshold voltage hysteresis and instability in metal-insulator-semiconductor (MIS) AlGaN/GaN heterostructure HEMTs. Journal of Applied Physics , 123 (18). 184503. ISSN 0021-8979

Amano, H., Baines, Y., Borga, M. et al. (39 more authors) (2018) The 2018 GaN Power Electronics Roadmap. Journal of Physics D: Applied Physics, 51. 163001. ISSN 0022-3727

Roberts, J.W., Chalker, P.R., Lee, K.B. orcid.org/0000-0002-5374-2767 et al. (6 more authors) (2016) Control of threshold voltage in E-mode and D-mode GaN-on-Si metal-insulator-semiconductor heterostructure field effect transistors by in-situ fluorine doping of atomic layer deposition Al2O3 gate dielectrics. Applied Physics Letters, 108 (7). 072901. ISSN 0003-6951