Items where authors include "Bailey, N.J."

Article

Tao, X. orcid.org/0009-0007-0794-7319, Jin, X., Gao, S. et al. (9 more authors) (2024) Engineering of impact ionization characteristics in GaAs/GaAsBi multiple quantum well avalanche photodiodes. ACS Photonics, 11 (11). pp. 4846-4853. ISSN 2330-4022

Braza, V., Fernández, D. orcid.org/0000-0002-3101-5251, Ben, T. orcid.org/0000-0003-4842-1472 et al. (5 more authors) (2024) Exploring the implementation of GaAsBi alloys as strain-reducing layers in InAs/GaAs quantum dots. Nanomaterials, 14 (4). 375. ISSN 2079-4991

Bailey, N.J., Carr, M.R., David, J.P.R. et al. (1 more author) (2022) Growth of InAs(Bi)/GaAs quantum dots under a bismuth surfactant at high and low temperature. Journal of Nanomaterials, 2022. 5108923. ISSN 1687-4110

Richards, R.D. orcid.org/0000-0001-7043-8372, Bailey, N.J., Liu, Y. et al. (2 more authors) (2022) GaAsBi: from molecular beam epitaxy growth to devices. physica status solidi (b), 259 (2). 2100330. ISSN 0370-1972

Bailey, N.J. orcid.org/0000-0001-8131-8544, Rockett, T.B.O., Flores, S. et al. (3 more authors) (2022) Effect of MBE growth conditions on GaAsBi photoluminescence lineshape and localised state filling. Scientific Reports, 12. 797. ISSN 2045-2322

Liu, Y., Yi, X., Bailey, N.J. et al. (6 more authors) (2021) Valence band engineering of GaAsBi for low noise avalanche photodiodes. Nature Communications, 12 (1). 4784.