Items where authors include "Bai, J."

Article

Shi, W. orcid.org/0000-0001-6056-3583, Yin, G., Wang, M. orcid.org/0000-0003-0941-8481 et al. (6 more authors) (2023) Progress of Electrical Resistance Tomography Application in Oil and Gas Reservoirs for Development Dynamic Monitoring. Processes, 11 (10). 2950. ISSN 2227-9717

Lin, C.-C. orcid.org/0000-0001-8656-1922, Wu, Y.-R. orcid.org/0000-0002-1457-3681, Kuo, H.-C. et al. (32 more authors) (2023) The micro-LED roadmap: status quo and prospects. Journal of Physics: Photonics, 5 (4). 042502. ISSN 2515-7647

Guan, Z., Bai, J., Zhang, Y. et al. (6 more authors) (2023) Ni-Co-Mn-Ti-B high performance multiferroic phase transformation material: simultaneous modulation of mechanical properties and successive caloric effects by B doping. Materials Today Physics, 36. 101183. ISSN 2542-5293

Fletcher, P., Martínez de Arriba, G., Tian, Y. et al. (5 more authors) (2022) Optical characterisation of InGaN-based microdisk arrays with nanoporous GaN/GaN DBRs. Journal of Physics D: Applied Physics, 55 (46). 464001. ISSN 0022-3727

Zhu, C., Xu, C., Feng, P. et al. (4 more authors) (2022) A comparison study of InGaN/GaN multiple quantum wells grown on (111) silicon and (0001) sapphire substrates under identical conditions. Journal of Physics D: Applied Physics, 55 (44). 444003. ISSN 0022-3727

Esendag, V. orcid.org/0000-0002-4483-8759, Feng, P., Zhu, C. et al. (3 more authors) (2022) Influence of a two-dimensional growth mode on electrical properties of the GaN buffer in an AlGaN/GaN high electron mobility transistor. Materials, 15 (17). 6043. ISSN 1996-1944

Holly Haggar, J.I., Ghataora, S.S., Trinito, V. et al. (2 more authors) (2022) Study of the luminescence decay of a semipolar green light-emitting diode for visible light communications by time-resolved electroluminescence. ACS Photonics, 9 (7). pp. 2378-2384. ISSN 2330-4022

Feng, P., Xu, C., Bai, J. et al. (4 more authors) (2022) A simple approach to achieving ultrasmall III-nitride microlight-emitting diodes with red emission. ACS Applied Electronic Materials, 4 (6). pp. 2581-3165. ISSN 2637-6113

Martinez de Arriba, G., Feng, P., Xu, C. et al. (3 more authors) (2022) Simple approach to mitigate the emission wavelength instability of III-nitride μLED arrays. ACS Photonics, 9 (6). pp. 2073-2078.

Esendag, V. orcid.org/0000-0002-4483-8759, Bai, J., Fletcher, P. et al. (4 more authors) (2021) Investigation of electrical properties of InGaN based micro light emitting diode (µLED) arrays achieved by direct epitaxy. physica status solidi (a) – applications and materials science, 218 (24). 2100474. ISSN 1862-6300

Cai, Y. orcid.org/0000-0002-2004-0881, Haggar, J.I.H., Zhu, C. et al. (3 more authors) (2021) Direct epitaxial approach to achieve a monolithic on-chip integration of a HEMT and a single micro-LED with a high-modulation bandwidth. ACS Applied Electronic Materials, 3 (1). pp. 445-450. ISSN 2637-6113

Bruckbauer, J., Gong, Y., Jiu, L. et al. (9 more authors) (2021) Influence of micro-patterning of the growth template on defect reduction and optical properties of non-polar (11-20) GaN. Journal of Physics D: Applied Physics, 54 (2). 025107. ISSN 0022-3727

Haggar, J.I.H., Cai, Y. orcid.org/0000-0002-2004-0881, Ghataora, S.S. et al. (3 more authors) (2020) High modulation bandwidth of semipolar (11–22) InGaN/GaN LEDs with long wavelength emission. ACS Applied Electronic Materials, 2 (8). pp. 2363-2368. ISSN 2637-6113

Zhao, X., Huang, K., Bruckbauer, J. et al. (9 more authors) (2020) Influence of an InGaN superlattice pre-layer on the performance of semi-polar (11–22) green LEDs grown on silicon. Scientific Reports, 10 (1). 12650. ISSN 2045-2322

Bai, J., Cai, Y. orcid.org/0000-0002-2004-0881, Feng, P. et al. (4 more authors) (2020) Ultrasmall, ultracompact and ultrahigh efficient InGaN micro light emitting diodes (μLEDs) with narrow spectral line width. ACS Nano, 14 (6). pp. 6906-6911. ISSN 1936-0851

Cai, Y., Shen, S., Zhu, C. et al. (3 more authors) (2020) Non-polar (11-20) GaN metal-semiconductor-metal photo-detectors with superior performance on silicon. ACS Applied Materials & Interfaces, 12 (22). pp. 25031-25036. ISSN 1944-8244

Trager-Cowan, C., Alasmari, A., Avis, W. et al. (34 more authors) (2020) Structural and luminescence imaging and characterisation of semiconductors in the scanning electron microscope. Semiconductor Science and Technology, 35 (5). 054001. ISSN 0268-1242

Poyiatzis, N., Bai, J., Smith, R.M. orcid.org/0000-0002-7718-7796 et al. (3 more authors) (2020) Optical polarization properties of (11–22) semi-polar InGaN LEDs with a wide spectral range. Scientific Reports, 10 (1). 7191.

Shen, S., Zhao, X., Yu, X. et al. (3 more authors) (2020) Semi‐polar InGaN‐based green light‐emitting diodes grown on silicon. physica status solidi (a), 217 (7). 1900654. ISSN 1862-6300

Bai, J., Cai, Y., Feng, P. et al. (4 more authors) (2020) A direct epitaxial approach to achieving ultrasmall and ultrabright InGaN micro light-emitting diodes (μLEDs). ACS Photonics, 7 (2). pp. 411-415. ISSN 2330-4022

Bruckbauer, J., Trager-Cowan, C., Hourahine, B. et al. (15 more authors) (2020) Luminescence behavior of semipolar (101¯1) InGaN/GaN “bow-tie” structures on patterned Si substrates. Journal of Applied Physics, 127 (3). ISSN 0021-8979

Zhang, Y., Smith, R.M. orcid.org/0000-0002-7718-7796, Jiu, L. et al. (2 more authors) (2019) Confocal photoluminescence investigation to identify basal stacking fault’s role in the optical properties of semi-polar InGaN/GaN lighting emitting diodes. Scientific Reports, 9 (1). 9735. ISSN 2045-2322

Bai, J., Jiu, L., Poyiatzis, N. et al. (3 more authors) (2019) Optical and polarization properties of nonpolar InGaN-based light-emitting diodes grown on micro-rod templates. Scientific Reports, 9 (1). 9770. ISSN 2045-2322

Syed, Z.A., Hou, Y., Yu, X. et al. (4 more authors) (2019) Ultra-energy-efficient photoelectrode using microstriped GaN on Si. ACS Photonics, 6 (5). pp. 1302-1306.

Cai, Y. orcid.org/0000-0002-2004-0881, Yu, X., Shen, S. et al. (5 more authors) (2019) Overgrowth and characterization of (11-22) semi-polar GaN on (113) silicon with a two-step method. Semiconductor Science and Technology, 34 (4). 045012. ISSN 0268-1242

Poyiatzis, N., Athanasiou, M., Bai, J. et al. (2 more authors) (2019) Monolithically integrated white light LEDs on (11-22) semi-polar GaN templates. Scientific Reports, 9. 1383. ISSN 2045-2322

Gong, Y., Jiu, L., Bruckbauer, J. et al. (3 more authors) (2019) Monolithic multiple colour emission from InGaN grown on patterned non-polar GaN. Scientific Reports, 9. 986. ISSN 2045-2322

Bai, J., Jiu, L., Gong, Y. et al. (1 more author) (2018) Non-polar (11-20) GaN grown on sapphire with double overgrowth on micro-rod/stripe templates. Semiconductor Science and Technology, 33 (12). 125023. ISSN 0268-1242

Wang, X., Bai, J. and Walther, T. orcid.org/0000-0003-3571-6263 (2018) Self-consistent absorption correction for quantifying very noisy X-ray maps: group III nitride nanowires as an example. Journal of Microscopy, 272 (2). pp. 111-122. ISSN 0022-2720

Cai, Y. orcid.org/0000-0002-2004-0881, Zhu, C., Jiu, L. et al. (5 more authors) (2018) Strain Analysis of GaN HEMTs on (111) Silicon with Two Transitional AlxGa1-xN Layers. Materials, 11 (10). 1968. ISSN 1996-1944

Cai, Y. orcid.org/0000-0002-2004-0881, Gong, Y., Bai, J. et al. (5 more authors) (2018) Controllable uniform green light emitters enabled by circular HEMT-LED devices. IEEE Photonics Journal, 10 (5).

Naresh-Kumar, G., Thomson, D., Zhang, Y. et al. (7 more authors) (2018) Imaging basal plane stacking faults and dislocations in (11-22) GaN using electron channelling contrast imaging. Journal of Applied Physics, 124 (6). 065301. ISSN 0021-8979

Brasser, C., Bruckbauer, J., Gong, Y. et al. (6 more authors) (2018) Cathodoluminescence studies of chevron features in semi-polar (1122) InGaN/GaN multiple quantum well structures. Journal of Applied Physics, 123 (17). 174502. ISSN 0021-8979

Bai, J., Gong, Y.P., Li, Z. et al. (2 more authors) (2018) Semi-polar InGaN/GaN multiple quantum well solar cells with spectral response at up to 560 nm. Solar Energy Materials and Solar Cells, 175. pp. 47-51. ISSN 0927-0248

Hou, Y., Syed, Z.A., Jiu, L. et al. (2 more authors) (2017) Porosity-enhanced solar powered hydrogen generation in GaN photoelectrodes. Applied Physics Letters , 111 (20). 203901. ISSN 0003-6951

Bruckbauer, J., Li, Z., Naresh-Kumar, G. et al. (8 more authors) (2017) Spatially-resolved optical and structural properties of semi-polar [Formula: see text] Al x Ga1-x N with x up to 0.56. Scientific Reports, 7 (1). 10804. ISSN 2045-2322

Xu, B., Jiu, L., Gong, Y. et al. (4 more authors) (2017) Stimulated emission from semi-polar (11-22) GaN overgrown on sapphire. AIP ADVANCES, 7 (4). ARTN 045009.

Li, Z., Wang, L., Jiu, L. et al. (6 more authors) (2017) Optical investigation of semi-polar (11-22) Al<inf>x</inf>Ga<inf>1-x</inf>N with high Al composition. Applied Physics Letters, 110 (9). ISSN 0003-6951

Li, Z, Jiu, L, Gong, Y. et al. (4 more authors) (2017) Semi-polar (11-22) AlGaN on overgrown GaN on micro-rod templates: Simultaneous management of crystal quality improvement and cracking issue. Applied Physics Letters, 110 (8). ISSN 0003-6951

Zhang, Y., Bai, J., Hou, Y. et al. (4 more authors) (2016) Microstructure investigation of semi-polar (11-22) GaN overgrown on differently designed micro-rod array templates. Applied Physics Letters, 109 (24). 241906. ISSN 0003-6951

Hou, Y., Yu, X., Syed, Z.A. et al. (3 more authors) (2016) GaN nano-pyramid arrays as an efficient photoelectrode for solar water splitting. Nanotechnology, 27 (45). 455401. ISSN 0957-4484

Gonzalez, J.A., Cheah, L.A., Gilbert, J.M. et al. (4 more authors) (2016) A silent speech system based on permanent magnet articulography and direct synthesis. Computer Speech & Language, 39. C. pp. 67-87. ISSN 0885-2308

Hou, Y., Syed, Z.A., Smith, R. orcid.org/0000-0002-7718-7796 et al. (5 more authors) (2016) Enhanced water splitting with silver decorated GaN photoelectrode. Journal of Physics D: Applied Physics, 49 (26). p. 265601. ISSN 0022-3727

Hou, Y., Bai, J., Smith, R. orcid.org/0000-0002-7718-7796 et al. (1 more author) (2016) A single blue nanorod light emitting diode. Nanotechnology, 27 (20). 205205. ISSN 0957-4484

Zhang, Y., Bai, J., Hou, Y. et al. (4 more authors) (2016) Defect reduction in overgrown semi-polar (11-22) GaN on a regularly arrayed micro-rod array template. AIP Advances, 6 (2). 025201.

Zhang, Y., Smith, R.M. orcid.org/0000-0002-7718-7796, Hou, Y. et al. (4 more authors) (2016) Stokes shift in semi-polar (11(2)over-bar2) InGaN/GaN multiple quantum wells. Applied Physics Letters, 108 (3). 031108. ISSN 0003-6951

Liu, B., Smith, R. orcid.org/0000-0002-7718-7796, Athanasiou, M. et al. (3 more authors) (2014) Temporally and spatially resolved photoluminescence investigation of (11(2)over-bar2) semi-polar InGaN/GaN multiple quantum wells grown on nanorod templates. Applied Physics Letters, 105 (26). 261103. ISSN 0003-6951

Hou, Y., Renwick, P., Liu, B. et al. (2 more authors) (2014) Room temperature plasmonic lasing in a continuous wave operation mode from an InGaN/GaN single nanorod with a low threshold. Scientific Reports, 4 (1). 5014.

Proceedings Paper

Gonzalez, J.A., Cheah, L.A., Gilbert, J.M. et al. (4 more authors) (2017) Voice restoration after laryngectomy based on magnetic sensing of articulator movement and statistical articulation-to-speech conversion. In: Communications in Computer and Information Science. BIOSTEC 2016 9th International Joint Conference on Biomedical Engineering Systems and Technologies, 21-23 Feb 2016, Rome. https://doi.org/10.1007/978-3-319-54717-6_17, 690 . , pp. 295-316. ISBN 9783319547169

Cheah, L.A., Gilbert, J.M., Gonzalez, J.A. et al. (4 more authors) (2017) Towards an intraoral-based silent speech restoration system for post-laryngectomy voice replacement. In: Biomedical Engineering Systems and Technologies. BIOSTEC 2016 9th International Joint Conference on Biomedical Engineering Systems and Technologies, 21-23 Feb 2016, Rome. https://doi.org/10.1007/978-3-319-54717-6, 690 . , pp. 22-38. ISBN 9783319547169