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Number of items at this level: 4.


Liu, H.Y., Childs, D.T., Badcock, T.J. et al. (7 more authors) (2005) High-performance three-layer 1.3-/spl mu/m InAs-GaAs quantum-dot lasers with very low continuous-wave room-temperature threshold currents. IEEE Photonics Technology Letters, 17 (6). pp. 1139-1141. ISSN 1041-1135


Ray, S.K., Groom, K.M., Hogg, R.A. et al. (5 more authors) (2005) Improved Temperature Performance of 1.31-mu/m Quantum Dot Lasers by Optimized Ridge Waveguide Design. IEEE Photonics Technology Letters, 17 (9). pp. 1785-1787. ISSN 1041-1135


Walker, C.L., Sandall, I.C., Smowton, P.M. et al. (4 more authors) (2005) The role of high growth temperature GaAs spacer layers in 1.3-/spl mu/m In(Ga)As quantum-dot lasers. IEEE Photonics Technology Letters, 17 (10). pp. 2011-2013. ISSN 1041-1135


Zheng, W.M., Halsall, M.P., Harmer, P. et al. (2 more authors) (2002) Acceptor binding energy in delta-doped GaAs/AlAs multiple-quantum wells. Journal of Applied Physics, 92 (10). pp. 6039-6042. ISSN 1089-7550

This list was generated on Thu Dec 8 04:04:18 2022 GMT.