Ryall, N, Crook, R and Weinstein, JA (2016) A Schottky Barrier Device on Steel for use in Photovoltaics. In: PVSAT-12. PVSAT-12: Photovaltaic Science, Application and Technology Conference, 06-08 Apr 2016, Liverpool, UK.
Abstract
On bringing a metal and a semiconductor into contact, a diodic interface can be created, the Schottky barrier. Photovoltaic devices based on the sensitization of a Schottky barrier have been reported. In these devices, the proposed mechanism is electron harvesting of electrons injected over a Schottky barrier interface into a semi-conductor film. This mechanism exploits the relatively long mean free path of hot electrons through a noble metal film.
Metadata
Item Type: | Proceedings Paper |
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Authors/Creators: |
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Dates: |
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Institution: | The University of Leeds |
Academic Units: | The University of Leeds > Faculty of Engineering & Physical Sciences (Leeds) > School of Chemical & Process Engineering (Leeds) > Energy Research Institute (Leeds) The University of Leeds > Faculty of Engineering & Physical Sciences (Leeds) > School of Electronic & Electrical Engineering (Leeds) |
Depositing User: | Symplectic Publications |
Date Deposited: | 15 Jul 2016 11:01 |
Last Modified: | 19 Jan 2018 06:06 |
Published Version: | http://www.pvsat.org.uk/proceedings/oral/ |
Status: | Published |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:99505 |