Performance of a high resolution chemically amplified electron beam resist at various beam energies
Yang, DX, Frommhold, A, McClelland, A et al. (6 more authors)
(2016)
Performance of a high resolution chemically amplified electron beam resist at various beam energies.
Microelectronic Engineering, 155.
pp. 97-101.
ISSN 0167-9317
Abstract
A novel negative tone molecular resist molecule featuring a tert-butyloxycarbonyl protected phenol malonate group bonded to a 1,8-Diazabicycloundece-7-ene is presented. The resist shows high-resolution capability in electron beam lithography at a range of beam energies. The resist demonstrated a sensitivity of 18.7 μC/cm2 at 20 kV. Dense features with a line width of 15 nm have been demonstrated at 30 kV, whilst a feature size of 12.5 nm was achieved for dense lines at 100 kV.
Metadata
Item Type:
Article
Authors/Creators:
Yang, DX
Frommhold, A
McClelland, A
Roth, J
Rosamond, M
Linfield, EH
Osmond, J
Palmer, RE
Robinson, APG
Copyright, Publisher and Additional Information:
(c) 2016 The Authors. Published by Elsevier B.V. This is an open access article under the CC BY license (http://creativecommons.org/licenses/by/4.0/).
Keywords:
electron beam lithography; molecular resist; chemically amplification; electron beam energy
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